@inproceedings{d4b7efc7c1ae462688abe339bf384d7a,
title = "Broadband emission of GaAs/AlGaAs quantum-well superluminescent diode at 850 nm",
abstract = "We report the fabrication and characterization of broad emission linewidth GaAs/AlGaAs quantum-well based superluminescent diodes. A photon absorption section and an optical amplifier sections are monolithically integrated on the device to suppress feedback oscillation and to amplifier the optical power, respectively. The device emitters at 850 nm peak wavelength, and exhibits a broad bandwidth of 65 nm, output power > 3.5 mW, and a spectral ripple of 0.5 dB at 20°C under continuous wave operation.",
keywords = "GaAs/AlGaAs laser, Optical coherence tomography, Quantum-well, Superluminescent diode",
author = "Dimas, {C. E.} and Vishton, {C. T.} and Merola, {R. A.} and Djie, {H. S.} and Ooi, {B. S.}",
year = "2007",
doi = "10.1117/12.700747",
language = "English (US)",
isbn = "0819465887",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Integrated Optics",
note = "Integrated Optics: Devices, Materials, and Technologies XI ; Conference date: 22-01-2007 Through 24-01-2007",
}