INIS
layers
100%
growth
100%
impurities
100%
molecular beam epitaxy
100%
recombination
100%
calcium
100%
light emitting diodes
80%
surfaces
40%
gallium nitrides
40%
superlattices
40%
efficiency
20%
levels
20%
silicon
20%
alloys
20%
power
20%
concentration
20%
substrates
20%
output
20%
cleaning
20%
defects
20%
quantum wells
20%
low temperature
20%
gallium arsenides
20%
nitrides
20%
temperature dependence
20%
Physics
Impurities
100%
Molecular Beam Epitaxy
100%
Growth
100%
Calcium
100%
Light Emitting Diode
80%
Temperature
80%
Region
40%
Magnitude
40%
Silicon
20%
Quantum Wells
20%
Wafer
20%
Substrates
20%
Output
20%
Cleaning
20%
Alloy
20%
Material Science
Impurity
100%
Molecular Beam Epitaxy
100%
Temperature
100%
Light-Emitting Diode
100%
Calcium
100%
Superlattice
50%
Surface
50%
Alloy
25%
Gallium Arsenide
25%
Silicon Wafer
25%
Nitride Compound
25%
Quantum Well
25%
Engineering
Light-Emitting Diode
100%
Radiative Recombination
100%
Shockley
50%
Active Region
50%
Superlattice
50%
Temperature
50%
Surface Coverage
25%
Silicon Wafer
25%
Nitride Layer
25%
Output Power
25%
Growth Temperature
25%
Substrate Surface
25%
Efficiency
25%
Defects
25%
Recombination
25%
Lower Temperature
25%
Cleaning
25%
Alloy
25%