Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation

Yun Xu; Xiaopeng Zhu; Qiaoqiang Gan; Guofeng Song; Qing Cao; Liang Guo; Yuzhang Li; Lianghui Chen

doi:10.1117/12.574932

Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation

Yun Xu, Xiaopeng Zhu, Qiaoqiang Gan, Guofeng Song, Qing Cao, Liang Guo, Yuzhang Li, Lianghui Chen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Usually in the calculation of valence subband structure for III-V direct bandgap material, axial approximation had been used in the Luttinger-Kohn model to simplify the computational efforts. In this letter, the valence subband structure for the GaInP/AlGaInP strained and lattice-matched quantum wells was calculated without axial approximation, on the basis of 6×6 Luttinger-Kohn Hamiltonian including strain and spin-orbit splitting effects. The numerical simulation results were presented with help of the finite-difference methods. The calculation results with/without axial approximation were compared and the effect of axial approximation on the valence subband structure was discussed in detail. The results indicated that there was a strong warping in the GaInP valence band, and axial approximation can lead to an error when k was not equal to zero, especially for compressively strained and lattice-matched GaInP/AlGaInP quantum wells.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Pages	221-225
Number of pages	5
DOIs	https://doi.org/10.1117/12.574932
State	Published - May 6 2005
Externally published	Yes

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title = "Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation",

abstract = "Usually in the calculation of valence subband structure for III-V direct bandgap material, axial approximation had been used in the Luttinger-Kohn model to simplify the computational efforts. In this letter, the valence subband structure for the GaInP/AlGaInP strained and lattice-matched quantum wells was calculated without axial approximation, on the basis of 6×6 Luttinger-Kohn Hamiltonian including strain and spin-orbit splitting effects. The numerical simulation results were presented with help of the finite-difference methods. The calculation results with/without axial approximation were compared and the effect of axial approximation on the valence subband structure was discussed in detail. The results indicated that there was a strong warping in the GaInP valence band, and axial approximation can lead to an error when k was not equal to zero, especially for compressively strained and lattice-matched GaInP/AlGaInP quantum wells.",

author = "Yun Xu and Xiaopeng Zhu and Qiaoqiang Gan and Guofeng Song and Qing Cao and Liang Guo and Yuzhang Li and Lianghui Chen",

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T1 - Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation

AU - Xu, Yun

AU - Zhu, Xiaopeng

AU - Gan, Qiaoqiang

AU - Song, Guofeng

AU - Cao, Qing

AU - Guo, Liang

AU - Li, Yuzhang

AU - Chen, Lianghui

N1 - Generated from Scopus record by KAUST IRTS on 2022-09-13

PY - 2005/5/6

Y1 - 2005/5/6

N2 - Usually in the calculation of valence subband structure for III-V direct bandgap material, axial approximation had been used in the Luttinger-Kohn model to simplify the computational efforts. In this letter, the valence subband structure for the GaInP/AlGaInP strained and lattice-matched quantum wells was calculated without axial approximation, on the basis of 6×6 Luttinger-Kohn Hamiltonian including strain and spin-orbit splitting effects. The numerical simulation results were presented with help of the finite-difference methods. The calculation results with/without axial approximation were compared and the effect of axial approximation on the valence subband structure was discussed in detail. The results indicated that there was a strong warping in the GaInP valence band, and axial approximation can lead to an error when k was not equal to zero, especially for compressively strained and lattice-matched GaInP/AlGaInP quantum wells.

AB - Usually in the calculation of valence subband structure for III-V direct bandgap material, axial approximation had been used in the Luttinger-Kohn model to simplify the computational efforts. In this letter, the valence subband structure for the GaInP/AlGaInP strained and lattice-matched quantum wells was calculated without axial approximation, on the basis of 6×6 Luttinger-Kohn Hamiltonian including strain and spin-orbit splitting effects. The numerical simulation results were presented with help of the finite-difference methods. The calculation results with/without axial approximation were compared and the effect of axial approximation on the valence subband structure was discussed in detail. The results indicated that there was a strong warping in the GaInP valence band, and axial approximation can lead to an error when k was not equal to zero, especially for compressively strained and lattice-matched GaInP/AlGaInP quantum wells.

UR - http://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.574932

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DO - 10.1117/12.574932

M3 - Conference contribution

SP - 221

EP - 225

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation

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