Carbon nanotube-graphene composite film as transparent conductive electrode for GaN-based light-emitting diodes

Chun Hong Kang; Chao Shen; M. Shuaib M. Saheed; Norani Muti Mohamed; Tien Khee Ng; Boon S. Ooi; Zainal Arif Burhanudin

doi:10.1063/1.4961667

Carbon nanotube-graphene composite film as transparent conductive electrode for GaN-based light-emitting diodes

Chun Hong Kang, Chao Shen, M. Shuaib M. Saheed, Norani Muti Mohamed, Tien Khee Ng, Boon S. Ooi, Zainal Arif Burhanudin^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Transparent conductive electrodes (TCE) made of carbon nanotube (CNT) and graphene composite for GaN-based light emitting diodes (LED) are presented. The TCE with 533-Ω/□ sheet resistance and 88% transmittance were obtained when chemical-vapor-deposition grown graphene was fused across CNT networks. With an additional 2-nm thin NiO_x interlayer between the TCE and top p-GaN layer of the LED, the forward voltage was reduced to 5.12 V at 20-mA injection current. Four-fold improvement in terms of light output power was observed. The improvement can be ascribed to the enhanced lateral current spreading across the hybrid CNT-graphene TCE before injection into the p-GaN layer.

Original language	English (US)
Article number	081902
Journal	Applied Physics Letters
Volume	109
Issue number	8
DOIs	https://doi.org/10.1063/1.4961667
State	Published - Aug 22 2016

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Carbon nanotube-graphene composite film as transparent conductive electrode for GaN-based light-emitting diodes",

abstract = "Transparent conductive electrodes (TCE) made of carbon nanotube (CNT) and graphene composite for GaN-based light emitting diodes (LED) are presented. The TCE with 533-Ω/□ sheet resistance and 88% transmittance were obtained when chemical-vapor-deposition grown graphene was fused across CNT networks. With an additional 2-nm thin NiOx interlayer between the TCE and top p-GaN layer of the LED, the forward voltage was reduced to 5.12 V at 20-mA injection current. Four-fold improvement in terms of light output power was observed. The improvement can be ascribed to the enhanced lateral current spreading across the hybrid CNT-graphene TCE before injection into the p-GaN layer.",

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T1 - Carbon nanotube-graphene composite film as transparent conductive electrode for GaN-based light-emitting diodes

AU - Kang, Chun Hong

AU - Shen, Chao

AU - Saheed, M. Shuaib M.

AU - Mohamed, Norani Muti

AU - Ng, Tien Khee

AU - Ooi, Boon S.

AU - Burhanudin, Zainal Arif

PY - 2016/8/22

Y1 - 2016/8/22

N2 - Transparent conductive electrodes (TCE) made of carbon nanotube (CNT) and graphene composite for GaN-based light emitting diodes (LED) are presented. The TCE with 533-Ω/□ sheet resistance and 88% transmittance were obtained when chemical-vapor-deposition grown graphene was fused across CNT networks. With an additional 2-nm thin NiOx interlayer between the TCE and top p-GaN layer of the LED, the forward voltage was reduced to 5.12 V at 20-mA injection current. Four-fold improvement in terms of light output power was observed. The improvement can be ascribed to the enhanced lateral current spreading across the hybrid CNT-graphene TCE before injection into the p-GaN layer.

AB - Transparent conductive electrodes (TCE) made of carbon nanotube (CNT) and graphene composite for GaN-based light emitting diodes (LED) are presented. The TCE with 533-Ω/□ sheet resistance and 88% transmittance were obtained when chemical-vapor-deposition grown graphene was fused across CNT networks. With an additional 2-nm thin NiOx interlayer between the TCE and top p-GaN layer of the LED, the forward voltage was reduced to 5.12 V at 20-mA injection current. Four-fold improvement in terms of light output power was observed. The improvement can be ascribed to the enhanced lateral current spreading across the hybrid CNT-graphene TCE before injection into the p-GaN layer.

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Carbon nanotube-graphene composite film as transparent conductive electrode for GaN-based light-emitting diodes

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