TY - GEN
T1 - Carbon nanotube thin film transistor devices
AU - Wei, J.
AU - Lee, C. W.
AU - Li, L. J.
PY - 2010
Y1 - 2010
N2 - In this study, it was demonstrated that full semiconductor device yield can be achieved using SWNT solutions prepared by selective functionalization of SWNTs with diazonium reagents and followed by density gradient ultracentrifugation (DGU) to remove most of M species and impurities. By increasing the network thickness, the effective mobility of the devices can be raised to ∼10 cm2/V×s while keeping the on-off ratio higher than 5000. According to the positive relationship between effective mobility and network thickness, it is possible to tune the mobility of solution processed SWNT transistors by controlling the thickness of SWNT films. The removal of impurities is found to be essential for achieving high on-off ratio devices. Instead, removal of M species is crucial to obtain good on-off characteristics. It is speculated that the achievement of the full semiconductor device yield using the SWNTs consisting of small diameter tubes is due to the significant differences between chiralities in terms of the reactivity with diazonium salts.
AB - In this study, it was demonstrated that full semiconductor device yield can be achieved using SWNT solutions prepared by selective functionalization of SWNTs with diazonium reagents and followed by density gradient ultracentrifugation (DGU) to remove most of M species and impurities. By increasing the network thickness, the effective mobility of the devices can be raised to ∼10 cm2/V×s while keeping the on-off ratio higher than 5000. According to the positive relationship between effective mobility and network thickness, it is possible to tune the mobility of solution processed SWNT transistors by controlling the thickness of SWNT films. The removal of impurities is found to be essential for achieving high on-off ratio devices. Instead, removal of M species is crucial to obtain good on-off characteristics. It is speculated that the achievement of the full semiconductor device yield using the SWNTs consisting of small diameter tubes is due to the significant differences between chiralities in terms of the reactivity with diazonium salts.
UR - http://www.scopus.com/inward/record.url?scp=77954282865&partnerID=8YFLogxK
U2 - 10.1109/IWJT.2010.5474971
DO - 10.1109/IWJT.2010.5474971
M3 - Conference contribution
AN - SCOPUS:77954282865
SN - 9781424458691
T3 - IWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology
SP - 127
EP - 131
BT - IWJT-2010
T2 - 10th International Workshop on Junction Technology, IWJT-2010
Y2 - 10 May 2010 through 11 May 2010
ER -