TY - JOUR
T1 - Carbon Nitride Thin Film-Sensitized Graphene Field-Effect Transistor: A Visible-Blind Ultraviolet Photodetector
AU - Palanisamy, Tamilarasan
AU - Mitra, Somak
AU - Batra, Nitinkumar
AU - Smajic, Jasmin
AU - Emwas, Abdul-Hamid
AU - Roqan, Iman S.
AU - Da Costa, Pedro M. F. J.
N1 - KAUST Repository Item: Exported on 2022-04-29
Acknowledged KAUST grant number(s): (BAS/1/1346-01-01
Acknowledgements: Financial support from KAUST (BAS/1/1346-01-01). The Core Labs at KAUST are thanked for their technical assistance. P.T. would like to thank CSIR-CECRI, Karaikudi for the financial support (IHP-0130 and IHP-0143)
PY - 2022/4/27
Y1 - 2022/4/27
N2 - Ultraviolet (UV) photodetectors often suffer from the lack of spectral selectivity due to strong interference from visible light. In this study, the exceptional electrical properties of graphene and the unique optical properties of carbon nitride thin films (CNTFs) are used to design visible-blind UV photodetectors. First, polycrystalline CNTFs with different thicknesses (12–94 nm) are produced by thermal vapor condensation. Compared to the bulk carbon nitride powder, these films have a considerable sp2 nitrogen deficiency, which is thickness dependent. In addition to showing a wider bandgap than the bulk counterpart, their optical absorption profile (in the ultraviolet–visible range) is unique. Critically, the absorbance falls sharply above 400 nm, making the CNTFs suitable for ultraviolet photodetection. As a result, graphene field-effect transistors (GFETs) sensitized with CNTFs show 103 A W−1 responsivity to UV radiation, a stark contrast to the negligible value obtained in the visible spectrum. The effect of film thickness on the photoresponse is determined, with the thinner CNTF leading to much better device performance. The CNTF/GFET photodetectors are also characterized by their fast response and recovery times, 0.5 and 2.0 s, respectively. These findings pave a simple route for the development of sensitive, visible-blind UV photodetectors.
AB - Ultraviolet (UV) photodetectors often suffer from the lack of spectral selectivity due to strong interference from visible light. In this study, the exceptional electrical properties of graphene and the unique optical properties of carbon nitride thin films (CNTFs) are used to design visible-blind UV photodetectors. First, polycrystalline CNTFs with different thicknesses (12–94 nm) are produced by thermal vapor condensation. Compared to the bulk carbon nitride powder, these films have a considerable sp2 nitrogen deficiency, which is thickness dependent. In addition to showing a wider bandgap than the bulk counterpart, their optical absorption profile (in the ultraviolet–visible range) is unique. Critically, the absorbance falls sharply above 400 nm, making the CNTFs suitable for ultraviolet photodetection. As a result, graphene field-effect transistors (GFETs) sensitized with CNTFs show 103 A W−1 responsivity to UV radiation, a stark contrast to the negligible value obtained in the visible spectrum. The effect of film thickness on the photoresponse is determined, with the thinner CNTF leading to much better device performance. The CNTF/GFET photodetectors are also characterized by their fast response and recovery times, 0.5 and 2.0 s, respectively. These findings pave a simple route for the development of sensitive, visible-blind UV photodetectors.
UR - http://hdl.handle.net/10754/676638
UR - https://onlinelibrary.wiley.com/doi/10.1002/admi.202200313
U2 - 10.1002/admi.202200313
DO - 10.1002/admi.202200313
M3 - Article
SN - 2196-7350
SP - 2200313
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
ER -