Carrier-density dependence of the hole mobility in doped and undoped regioregular poly(3-hexylthiophene)

Jakob J. Brondijk; Francesco Maddalena; Kamal Asadi; Herman J. van Leijen; Martin Heeney; Paul W.M. Blom; Dago M. de Leeuw

doi:10.1002/pssb.201147266

Carrier-density dependence of the hole mobility in doped and undoped regioregular poly(3-hexylthiophene)

Jakob J. Brondijk, Francesco Maddalena, Kamal Asadi, Herman J. van Leijen, Martin Heeney, Paul W.M. Blom, Dago M. de Leeuw

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We investigate the mobility of poly(3-hexylthiophene) (P3HT) over a carrier-density range from 1015 to 1020cm-3. Hole-only diodes were used for densities below 1016cm-3 and field-effect transistors were used for carrier densities higher than 1018cm-3. To fill the gap, intermediate densities were probed using chemically doped Schottky diodes and transistors. Combining of the mobilities in doped and undoped devices experimentally establishes the full relation of the mobility over the whole carrier-density range. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English (US)
Pages (from-to)	138-141
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	249
Issue number	1
DOIs	https://doi.org/10.1002/pssb.201147266
State	Published - Jan 1 2012
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1002/pssb.201147266

Cite this

@article{08a9e36e280845e4888e119fabbb9b1c,

title = "Carrier-density dependence of the hole mobility in doped and undoped regioregular poly(3-hexylthiophene)",

abstract = "We investigate the mobility of poly(3-hexylthiophene) (P3HT) over a carrier-density range from 1015 to 1020cm-3. Hole-only diodes were used for densities below 1016cm-3 and field-effect transistors were used for carrier densities higher than 1018cm-3. To fill the gap, intermediate densities were probed using chemically doped Schottky diodes and transistors. Combining of the mobilities in doped and undoped devices experimentally establishes the full relation of the mobility over the whole carrier-density range. {\textcopyright} 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

author = "Brondijk, {Jakob J.} and Francesco Maddalena and Kamal Asadi and {van Leijen}, {Herman J.} and Martin Heeney and Blom, {Paul W.M.} and {de Leeuw}, {Dago M.}",

note = "Generated from Scopus record by KAUST IRTS on 2023-02-14",

year = "2012",

month = jan,

day = "1",

doi = "10.1002/pssb.201147266",

language = "English (US)",

volume = "249",

pages = "138--141",

journal = "Physica Status Solidi (B) Basic Research",

issn = "0370-1972",

publisher = "Wiley-VCH Verlag",

number = "1",

}

TY - JOUR

T1 - Carrier-density dependence of the hole mobility in doped and undoped regioregular poly(3-hexylthiophene)

AU - Brondijk, Jakob J.

AU - Maddalena, Francesco

AU - Asadi, Kamal

AU - van Leijen, Herman J.

AU - Heeney, Martin

AU - Blom, Paul W.M.

AU - de Leeuw, Dago M.

N1 - Generated from Scopus record by KAUST IRTS on 2023-02-14

PY - 2012/1/1

Y1 - 2012/1/1

N2 - We investigate the mobility of poly(3-hexylthiophene) (P3HT) over a carrier-density range from 1015 to 1020cm-3. Hole-only diodes were used for densities below 1016cm-3 and field-effect transistors were used for carrier densities higher than 1018cm-3. To fill the gap, intermediate densities were probed using chemically doped Schottky diodes and transistors. Combining of the mobilities in doped and undoped devices experimentally establishes the full relation of the mobility over the whole carrier-density range. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - We investigate the mobility of poly(3-hexylthiophene) (P3HT) over a carrier-density range from 1015 to 1020cm-3. Hole-only diodes were used for densities below 1016cm-3 and field-effect transistors were used for carrier densities higher than 1018cm-3. To fill the gap, intermediate densities were probed using chemically doped Schottky diodes and transistors. Combining of the mobilities in doped and undoped devices experimentally establishes the full relation of the mobility over the whole carrier-density range. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

UR - https://onlinelibrary.wiley.com/doi/10.1002/pssb.201147266

UR - http://www.scopus.com/inward/record.url?scp=83455176848&partnerID=8YFLogxK

U2 - 10.1002/pssb.201147266

DO - 10.1002/pssb.201147266

M3 - Article

SN - 0370-1972

VL - 249

SP - 138

EP - 141

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 1

ER -

Carrier-density dependence of the hole mobility in doped and undoped regioregular poly(3-hexylthiophene)

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this