Carrier dynamics of InxGa1-xN/GaN multiple quantum wells grown on (−201) β-Ga2O3 for bright vertical light emitting diodes

Mufasila Mumthaz Muhammed; Jian Xu; Nimer Wehbe; Iman S. Roqan

doi:10.1364/oe.26.014869

Carrier dynamics of InxGa1-xN/GaN multiple quantum wells grown on (−201) β-Ga2O3 for bright vertical light emitting diodes

Mufasila Mumthaz Muhammed, Jian Xu, Nimer Wehbe, Iman S. Roqan

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

High-quality InxGa1-xN/GaN multi-quantum well (MQW) structures (0.05≤x≤0.13), are successfully grown on transparent and conductive (−201)-oriented β-Ga2O3 substrate. Scanning-transmission electron microscopy and secondary ion mass spectrometry (SIMS) show well-defined high quality MQWs, while the In and Ga compositions in the wells and the barriers are estimated by SIMS. Temperature-dependant Photoluminescence (PL) confirms high optical quality with a strong bandedge emission and negligble yellow band. time-resolved PL measurements (via above/below-GaN bandgap excitations) explain carrier dynamics, showing that the radiative recombination is predominant. Our results demonstrate that (−201)-oriented β-Ga2O3 is a strong candidate as a substrate for III-nitride-based vertical- emitting devices.

Original language	English (US)
Pages (from-to)	14869
Journal	Optics Express
Volume	26
Issue number	12
DOIs	https://doi.org/10.1364/oe.26.014869
State	Published - May 29 2018

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https://repository.kaust.edu.sa/bitstream/10754/628007/1/oe-26-12-14869.pdf

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@article{8464b59e839a420588b6be80c1d0a53a,

title = "Carrier dynamics of InxGa1-xN/GaN multiple quantum wells grown on (−201) β-Ga2O3 for bright vertical light emitting diodes",

abstract = "High-quality InxGa1-xN/GaN multi-quantum well (MQW) structures (0.05≤x≤0.13), are successfully grown on transparent and conductive (−201)-oriented β-Ga2O3 substrate. Scanning-transmission electron microscopy and secondary ion mass spectrometry (SIMS) show well-defined high quality MQWs, while the In and Ga compositions in the wells and the barriers are estimated by SIMS. Temperature-dependant Photoluminescence (PL) confirms high optical quality with a strong bandedge emission and negligble yellow band. time-resolved PL measurements (via above/below-GaN bandgap excitations) explain carrier dynamics, showing that the radiative recombination is predominant. Our results demonstrate that (−201)-oriented β-Ga2O3 is a strong candidate as a substrate for III-nitride-based vertical- emitting devices.",

author = "{Mumthaz Muhammed}, Mufasila and Jian Xu and Nimer Wehbe and Roqan, {Iman S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The samples were purchased from Tamura Corporation and Novel Crystal Technology, Inc., Sayama, Saitama 350-1328, Japan. The author would like to thank the growers Mr. Yoshihiro Yamashita, Mr. Higuchi Mitsuhito, and Mr. Akito Kuramata, president and CEO of Novel Crystal Technology, Inc. Japan. The authors thanks KAUST for the finance support.",

year = "2018",

month = may,

day = "29",

doi = "10.1364/oe.26.014869",

language = "English (US)",

volume = "26",

pages = "14869",

journal = "Optics Express",

issn = "1094-4087",

publisher = "Optica Publishing Group",

number = "12",

}

TY - JOUR

T1 - Carrier dynamics of InxGa1-xN/GaN multiple quantum wells grown on (−201) β-Ga2O3 for bright vertical light emitting diodes

AU - Mumthaz Muhammed, Mufasila

AU - Xu, Jian

AU - Wehbe, Nimer

AU - Roqan, Iman S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The samples were purchased from Tamura Corporation and Novel Crystal Technology, Inc., Sayama, Saitama 350-1328, Japan. The author would like to thank the growers Mr. Yoshihiro Yamashita, Mr. Higuchi Mitsuhito, and Mr. Akito Kuramata, president and CEO of Novel Crystal Technology, Inc. Japan. The authors thanks KAUST for the finance support.

PY - 2018/5/29

Y1 - 2018/5/29

N2 - High-quality InxGa1-xN/GaN multi-quantum well (MQW) structures (0.05≤x≤0.13), are successfully grown on transparent and conductive (−201)-oriented β-Ga2O3 substrate. Scanning-transmission electron microscopy and secondary ion mass spectrometry (SIMS) show well-defined high quality MQWs, while the In and Ga compositions in the wells and the barriers are estimated by SIMS. Temperature-dependant Photoluminescence (PL) confirms high optical quality with a strong bandedge emission and negligble yellow band. time-resolved PL measurements (via above/below-GaN bandgap excitations) explain carrier dynamics, showing that the radiative recombination is predominant. Our results demonstrate that (−201)-oriented β-Ga2O3 is a strong candidate as a substrate for III-nitride-based vertical- emitting devices.

AB - High-quality InxGa1-xN/GaN multi-quantum well (MQW) structures (0.05≤x≤0.13), are successfully grown on transparent and conductive (−201)-oriented β-Ga2O3 substrate. Scanning-transmission electron microscopy and secondary ion mass spectrometry (SIMS) show well-defined high quality MQWs, while the In and Ga compositions in the wells and the barriers are estimated by SIMS. Temperature-dependant Photoluminescence (PL) confirms high optical quality with a strong bandedge emission and negligble yellow band. time-resolved PL measurements (via above/below-GaN bandgap excitations) explain carrier dynamics, showing that the radiative recombination is predominant. Our results demonstrate that (−201)-oriented β-Ga2O3 is a strong candidate as a substrate for III-nitride-based vertical- emitting devices.

UR - http://hdl.handle.net/10754/628007

UR - https://www.osapublishing.org/oe/abstract.cfm?uri=oe-26-12-14869

UR - http://www.scopus.com/inward/record.url?scp=85048367037&partnerID=8YFLogxK

U2 - 10.1364/oe.26.014869

DO - 10.1364/oe.26.014869

M3 - Article

SN - 1094-4087

VL - 26

SP - 14869

JO - Optics Express

JF - Optics Express

IS - 12

ER -

Carrier dynamics of InxGa1-xN/GaN multiple quantum wells grown on (−201) β-Ga2O3 for bright vertical light emitting diodes

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