Cathodoluminescence characterization of [112̄0]-oriented InGaN/GaN thin films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy

K. Kusakabe; T. Furuzuki; K. Ohkawa

doi:10.1002/pssc.200674830

Cathodoluminescence characterization of [112̄0]-oriented InGaN/GaN thin films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy

K. Kusakabe^*, T. Furuzuki, K. Ohkawa

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We report the cathodoluminescence (CL) characterization of nonpolar [112̄ 20]-oriented InGaN/GaN thin films grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The epitaxial GaN films grown on r-plane sapphire substrates frequently show facet surface morphology. The CL peak wavelength and local indium composition of InGaN grown on them were gradually varied with the probed position from the facet summit to valley. In a-plane InGaN, the facet summit was In-rich area while the valley was In-poor area. This is due to the material transport issue during epitaxial growth.

Original language	English (US)
Pages (from-to)	2544-2547
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	4
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200674830
State	Published - 2007
Externally published	Yes
Event	International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan Duration: Oct 22 2006 → Oct 27 2006

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1002/pssc.200674830

Cite this

@article{f597230fd866463385860f81426b16ad,

title = "Cathodoluminescence characterization of [11{\=2}0]-oriented InGaN/GaN thin films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy",

abstract = "We report the cathodoluminescence (CL) characterization of nonpolar [11{\=2} 20]-oriented InGaN/GaN thin films grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The epitaxial GaN films grown on r-plane sapphire substrates frequently show facet surface morphology. The CL peak wavelength and local indium composition of InGaN grown on them were gradually varied with the probed position from the facet summit to valley. In a-plane InGaN, the facet summit was In-rich area while the valley was In-poor area. This is due to the material transport issue during epitaxial growth.",

author = "K. Kusakabe and T. Furuzuki and K. Ohkawa",

year = "2007",

doi = "10.1002/pssc.200674830",

language = "English (US)",

volume = "4",

pages = "2544--2547",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley",

number = "7",

note = "International Workshop on Nitride Semiconductors, IWN 2006 ; Conference date: 22-10-2006 Through 27-10-2006",

}

Cathodoluminescence characterization of [112̄0]-oriented InGaN/GaN thin films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy. / Kusakabe, K.; Furuzuki, T.; Ohkawa, K.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 4, No. 7, 2007, p. 2544-2547.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Cathodoluminescence characterization of [112̄0]-oriented InGaN/GaN thin films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy

AU - Kusakabe, K.

AU - Furuzuki, T.

AU - Ohkawa, K.

PY - 2007

Y1 - 2007

N2 - We report the cathodoluminescence (CL) characterization of nonpolar [112̄ 20]-oriented InGaN/GaN thin films grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The epitaxial GaN films grown on r-plane sapphire substrates frequently show facet surface morphology. The CL peak wavelength and local indium composition of InGaN grown on them were gradually varied with the probed position from the facet summit to valley. In a-plane InGaN, the facet summit was In-rich area while the valley was In-poor area. This is due to the material transport issue during epitaxial growth.

AB - We report the cathodoluminescence (CL) characterization of nonpolar [112̄ 20]-oriented InGaN/GaN thin films grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The epitaxial GaN films grown on r-plane sapphire substrates frequently show facet surface morphology. The CL peak wavelength and local indium composition of InGaN grown on them were gradually varied with the probed position from the facet summit to valley. In a-plane InGaN, the facet summit was In-rich area while the valley was In-poor area. This is due to the material transport issue during epitaxial growth.

UR - http://www.scopus.com/inward/record.url?scp=49749086500&partnerID=8YFLogxK

U2 - 10.1002/pssc.200674830

DO - 10.1002/pssc.200674830

M3 - Conference article

AN - SCOPUS:49749086500

SN - 1862-6351

VL - 4

SP - 2544

EP - 2547

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 7

T2 - International Workshop on Nitride Semiconductors, IWN 2006

Y2 - 22 October 2006 through 27 October 2006

ER -

Cathodoluminescence characterization of [112̄0]-oriented InGaN/GaN thin films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this