Cavity parameters of zncdse/znse single-quantum-well separate-confinement-heterostructure laser diodes

Ayumu Tsujimura; Shigeo Yoshii; Shigeo Hayashi; Kazuhiro Ohkawa; Tsuneo Mitsuyu

doi:10.1143/JJAP.32.L1750

Cavity parameters of zncdse/znse single-quantum-well separate-confinement-heterostructure laser diodes

Ayumu Tsujimura, Shigeo Yoshii, Shigeo Hayashi, Kazuhiro Ohkawa, Tsuneo Mitsuyu

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The cavity length dependence of the external differential quantum efficiency and the threshold current density was investigated for ZnCdSe/ZnSe single-quantum-well separate-confinement-heterostructure laser diodes at 77 K. An internal loss of 1.5 cm^-1, an internal quantum efficiency of 61% for stimulated emission, a transparency current density of 1.8 kA/(cm2*/mi) and a gain factor of 0.36 cm².μm/A were obtained. The transparency current density is 3-4 times larger than that for bulk GaAs. Improvement in the internal quantum efficiency for spontaneous emission will lead to reduction of the operation current.

Original language	English (US)
Pages (from-to)	L1750-L1752
Journal	Japanese Journal of Applied Physics
Volume	32
Issue number	12 A
DOIs	https://doi.org/10.1143/JJAP.32.L1750
State	Published - Dec 1993
Externally published	Yes

Keywords

Cavity parameters
Optical gain
Semiconductor lasers
Transparency current density
ZnCdSe
ZnSe

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/JJAP.32.L1750

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title = "Cavity parameters of zncdse/znse single-quantum-well separate-confinement-heterostructure laser diodes",

abstract = "The cavity length dependence of the external differential quantum efficiency and the threshold current density was investigated for ZnCdSe/ZnSe single-quantum-well separate-confinement-heterostructure laser diodes at 77 K. An internal loss of 1.5 cm-1, an internal quantum efficiency of 61% for stimulated emission, a transparency current density of 1.8 kA/(cm2*/mi) and a gain factor of 0.36 cm2.μm/A were obtained. The transparency current density is 3-4 times larger than that for bulk GaAs. Improvement in the internal quantum efficiency for spontaneous emission will lead to reduction of the operation current.",

keywords = "Cavity parameters, Optical gain, Semiconductor lasers, Transparency current density, ZnCdSe, ZnSe",

author = "Ayumu Tsujimura and Shigeo Yoshii and Shigeo Hayashi and Kazuhiro Ohkawa and Tsuneo Mitsuyu",

year = "1993",

month = dec,

doi = "10.1143/JJAP.32.L1750",

language = "English (US)",

volume = "32",

pages = "L1750--L1752",

journal = "Japanese Journal of Applied Physics",

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publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Cavity parameters of zncdse/znse single-quantum-well separate-confinement-heterostructure laser diodes

AU - Tsujimura, Ayumu

AU - Yoshii, Shigeo

AU - Hayashi, Shigeo

AU - Ohkawa, Kazuhiro

AU - Mitsuyu, Tsuneo

PY - 1993/12

Y1 - 1993/12

N2 - The cavity length dependence of the external differential quantum efficiency and the threshold current density was investigated for ZnCdSe/ZnSe single-quantum-well separate-confinement-heterostructure laser diodes at 77 K. An internal loss of 1.5 cm-1, an internal quantum efficiency of 61% for stimulated emission, a transparency current density of 1.8 kA/(cm2*/mi) and a gain factor of 0.36 cm2.μm/A were obtained. The transparency current density is 3-4 times larger than that for bulk GaAs. Improvement in the internal quantum efficiency for spontaneous emission will lead to reduction of the operation current.

AB - The cavity length dependence of the external differential quantum efficiency and the threshold current density was investigated for ZnCdSe/ZnSe single-quantum-well separate-confinement-heterostructure laser diodes at 77 K. An internal loss of 1.5 cm-1, an internal quantum efficiency of 61% for stimulated emission, a transparency current density of 1.8 kA/(cm2*/mi) and a gain factor of 0.36 cm2.μm/A were obtained. The transparency current density is 3-4 times larger than that for bulk GaAs. Improvement in the internal quantum efficiency for spontaneous emission will lead to reduction of the operation current.

KW - Cavity parameters

KW - Optical gain

KW - Semiconductor lasers

KW - Transparency current density

KW - ZnCdSe

KW - ZnSe

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DO - 10.1143/JJAP.32.L1750

M3 - Article

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SN - 0021-4922

VL - 32

SP - L1750-L1752

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 12 A

ER -

Cavity parameters of zncdse/znse single-quantum-well separate-confinement-heterostructure laser diodes

Abstract

Keywords

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