Challenges in barrier and seed layers characterization of Cu technology IC devices

Kun Li; Eddie Er; Timothy Yeow; Dong Tang

doi:10.1109/TDMR.2006.876584

Challenges in barrier and seed layers characterization of Cu technology IC devices

Kun Li^*, Eddie Er, Timothy Yeow, Dong Tang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Ta barrier and Cu seed layer characterization becomes extremely challenging with devices scaling down into the 130- and 90-nm regime. This paper aims at providing a feasible solution for this challenge from both sample preparation and transmission electron microscopy imaging perspectives. Different sample preparation and imaging techniques are compared here.

Original language	English (US)
Article number	1673721
Pages (from-to)	283-287
Number of pages	5
Journal	IEEE Transactions on Device and Materials Reliability
Volume	6
Issue number	2
DOIs	https://doi.org/10.1109/TDMR.2006.876584
State	Published - Jun 2006
Externally published	Yes

Keywords

Cylindrical effect
Integrated circuits (IC)
Sample preparations
Transmission electron microscopy (TEM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

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10.1109/TDMR.2006.876584

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title = "Challenges in barrier and seed layers characterization of Cu technology IC devices",

abstract = "Ta barrier and Cu seed layer characterization becomes extremely challenging with devices scaling down into the 130- and 90-nm regime. This paper aims at providing a feasible solution for this challenge from both sample preparation and transmission electron microscopy imaging perspectives. Different sample preparation and imaging techniques are compared here.",

keywords = "Cylindrical effect, Integrated circuits (IC), Sample preparations, Transmission electron microscopy (TEM)",

author = "Kun Li and Eddie Er and Timothy Yeow and Dong Tang",

year = "2006",

month = jun,

doi = "10.1109/TDMR.2006.876584",

language = "English (US)",

volume = "6",

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journal = "IEEE Transactions on Device and Materials Reliability",

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publisher = "Institute of Electrical and Electronics Engineers",

number = "2",

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T1 - Challenges in barrier and seed layers characterization of Cu technology IC devices

AU - Li, Kun

AU - Er, Eddie

AU - Yeow, Timothy

AU - Tang, Dong

PY - 2006/6

Y1 - 2006/6

N2 - Ta barrier and Cu seed layer characterization becomes extremely challenging with devices scaling down into the 130- and 90-nm regime. This paper aims at providing a feasible solution for this challenge from both sample preparation and transmission electron microscopy imaging perspectives. Different sample preparation and imaging techniques are compared here.

AB - Ta barrier and Cu seed layer characterization becomes extremely challenging with devices scaling down into the 130- and 90-nm regime. This paper aims at providing a feasible solution for this challenge from both sample preparation and transmission electron microscopy imaging perspectives. Different sample preparation and imaging techniques are compared here.

KW - Cylindrical effect

KW - Integrated circuits (IC)

KW - Sample preparations

KW - Transmission electron microscopy (TEM)

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U2 - 10.1109/TDMR.2006.876584

DO - 10.1109/TDMR.2006.876584

M3 - Article

AN - SCOPUS:33748095664

SN - 1530-4388

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SP - 283

EP - 287

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

IS - 2

M1 - 1673721

ER -

Challenges in barrier and seed layers characterization of Cu technology IC devices

Abstract

Keywords

ASJC Scopus subject areas

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