Challenges in dual workfunction metal gate CMOS integration

Byoung Hun Lee; Seungchul Song; Muhammad Mustafa Hussain; Raj Jammy

doi:10.1149/1.2356286

Challenges in dual workfunction metal gate CMOS integration

Byoung Hun Lee^*, Seungchul Song, Muhammad Mustafa Hussain, Raj Jammy

^*Corresponding author for this work

Computer, Electrical and Mathematical Sciences and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Technical challenges for various integration schemes including gate first dual metal process, fully silicided gate and replacement gate are discussed. Implementation of dual workfunction metal gate CMOS integration is feasible, but needs more systematic reliability assessment. copyright The Electrochemical Society.

Original language	English (US)
Pages (from-to)	263-274
Number of pages	12
Journal	ECS Transactions
Volume	3
Issue number	2
DOIs	https://doi.org/10.1149/1.2356286
State	Published - Dec 1 2006
Event	Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: Oct 29 2006 → Nov 3 2006

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.2356286

Cite this

@article{609ca272c7d449a998da53cb09517bcd,

title = "Challenges in dual workfunction metal gate CMOS integration",

abstract = "Technical challenges for various integration schemes including gate first dual metal process, fully silicided gate and replacement gate are discussed. Implementation of dual workfunction metal gate CMOS integration is feasible, but needs more systematic reliability assessment. copyright The Electrochemical Society.",

author = "Lee, {Byoung Hun} and Seungchul Song and Hussain, {Muhammad Mustafa} and Raj Jammy",

year = "2006",

month = dec,

day = "1",

doi = "10.1149/1.2356286",

language = "English (US)",

volume = "3",

pages = "263--274",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society",

number = "2",

note = "Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

}

TY - JOUR

T1 - Challenges in dual workfunction metal gate CMOS integration

AU - Lee, Byoung Hun

AU - Song, Seungchul

AU - Hussain, Muhammad Mustafa

AU - Jammy, Raj

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Technical challenges for various integration schemes including gate first dual metal process, fully silicided gate and replacement gate are discussed. Implementation of dual workfunction metal gate CMOS integration is feasible, but needs more systematic reliability assessment. copyright The Electrochemical Society.

AB - Technical challenges for various integration schemes including gate first dual metal process, fully silicided gate and replacement gate are discussed. Implementation of dual workfunction metal gate CMOS integration is feasible, but needs more systematic reliability assessment. copyright The Electrochemical Society.

UR - http://www.scopus.com/inward/record.url?scp=33846986389&partnerID=8YFLogxK

U2 - 10.1149/1.2356286

DO - 10.1149/1.2356286

M3 - Conference article

AN - SCOPUS:33846986389

SN - 1938-5862

VL - 3

SP - 263

EP - 274

JO - ECS Transactions

JF - ECS Transactions

IS - 2

T2 - Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting

Y2 - 29 October 2006 through 3 November 2006

ER -

Challenges in dual workfunction metal gate CMOS integration

Abstract

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