Challenges in dual workfunction metal gate CMOS integration

Byoung Hun Lee; Seungchul Song; Muhammad Hussain; Raj Jammy

doi:10.1149/1.2356286

Challenges in dual workfunction metal gate CMOS integration

Byoung Hun Lee^*, Seungchul Song, Muhammad Hussain, Raj Jammy

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Technical challenges for various integration schemes including gate first dual metal process, fully silicided gate and replacement gate are discussed. Implementation of dual workfunction metal gate CMOS integration is feasible, but needs more systematic reliability assessment. copyright The Electrochemical Society.

Original language	English (US)
Title of host publication	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2
Subtitle of host publication	New Materials, Processes, and Equipment
Publisher	Electrochemical Society Inc.
Pages	263-274
Number of pages	12
Edition	2
ISBN (Electronic)	1566775027
DOIs	https://doi.org/10.1149/1.2356286
State	Published - 2006
Externally published	Yes
Event	Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: Oct 29 2006 → Nov 3 2006

Publication series

Name	ECS Transactions
Number	2
Volume	3
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting
Country/Territory	Mexico
City	Cancun
Period	10/29/06 → 11/3/06

ASJC Scopus subject areas

General Engineering

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10.1149/1.2356286

Cite this

@inproceedings{e3c1a5c0f18d46d48cc46cc33f9f33b3,

title = "Challenges in dual workfunction metal gate CMOS integration",

abstract = "Technical challenges for various integration schemes including gate first dual metal process, fully silicided gate and replacement gate are discussed. Implementation of dual workfunction metal gate CMOS integration is feasible, but needs more systematic reliability assessment. copyright The Electrochemical Society.",

author = "Lee, {Byoung Hun} and Seungchul Song and Muhammad Hussain and Raj Jammy",

year = "2006",

doi = "10.1149/1.2356286",

language = "English (US)",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "2",

pages = "263--274",

booktitle = "Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2",

edition = "2",

note = "Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

}

Lee, BH, Song, S, Hussain, M & Jammy, R 2006, Challenges in dual workfunction metal gate CMOS integration. in Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. 2 edn, ECS Transactions, no. 2, vol. 3, Electrochemical Society Inc., pp. 263-274, Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting, Cancun, Mexico, 10/29/06. https://doi.org/10.1149/1.2356286

Challenges in dual workfunction metal gate CMOS integration. / Lee, Byoung Hun; Song, Seungchul; Hussain, Muhammad et al.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. 2. ed. Electrochemical Society Inc., 2006. p. 263-274 (ECS Transactions; Vol. 3, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Challenges in dual workfunction metal gate CMOS integration

AU - Lee, Byoung Hun

AU - Song, Seungchul

AU - Hussain, Muhammad

AU - Jammy, Raj

PY - 2006

Y1 - 2006

N2 - Technical challenges for various integration schemes including gate first dual metal process, fully silicided gate and replacement gate are discussed. Implementation of dual workfunction metal gate CMOS integration is feasible, but needs more systematic reliability assessment. copyright The Electrochemical Society.

AB - Technical challenges for various integration schemes including gate first dual metal process, fully silicided gate and replacement gate are discussed. Implementation of dual workfunction metal gate CMOS integration is feasible, but needs more systematic reliability assessment. copyright The Electrochemical Society.

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U2 - 10.1149/1.2356286

DO - 10.1149/1.2356286

M3 - Conference contribution

AN - SCOPUS:33846986389

T3 - ECS Transactions

SP - 263

EP - 274

BT - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2

PB - Electrochemical Society Inc.

T2 - Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting

Y2 - 29 October 2006 through 3 November 2006

ER -

Challenges in dual workfunction metal gate CMOS integration

Abstract

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