Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEM

Y. W. Ho; V. Ng; W. K. Choi; S. P. Ng; T. Osipowicz; H. L. Seng; W. W. Tjui; K. Li

doi:10.1016/S1359-6462(01)00743-6

Characterisation of Ge nanocrystals in co-sputtered Ge+SiO₂ system using raman spectroscopy, RBS and TEM

Y. W. Ho^*, V. Ng, W. K. Choi, S. P. Ng, T. Osipowicz, H. L. Seng, W. W. Tjui, K. Li

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The high resolution transmission electron microscopy (HRTEM), Rutherford backscattering spectroscopy (RBS) and Raman spectroscopy results of germanium nanocrystals embedded in SiO₂ synthesized by rapid thermal annealing (RTA) was presented. HRTEM reveals that annealing temperatures below 800°C produce fewer and smaller Ge nanocrystals compared to those produced at 800°C. Above 800°C, the nanocrystals formed have a wide range of size distribution. Therefore the optimum temperature is at 800°C to have uniformly sized and regularly spaced nanocrystals. RBS was performed to establish the Ge distribution in the SiO₂ matrix during annealing.

Original language	English (US)
Pages (from-to)	1291-1295
Number of pages	5
Journal	Scripta Materialia
Volume	44
Issue number	8-9
DOIs	https://doi.org/10.1016/S1359-6462(01)00743-6
State	Published - May 18 2001
Externally published	Yes

Keywords

Germanium
Nanocrystal
Raman spectroscopy
Rutherford backscattering
Transmission electron microscopy

ASJC Scopus subject areas

Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
General Materials Science

Access to Document

10.1016/S1359-6462(01)00743-6

Cite this

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title = "Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEM",

abstract = "The high resolution transmission electron microscopy (HRTEM), Rutherford backscattering spectroscopy (RBS) and Raman spectroscopy results of germanium nanocrystals embedded in SiO2 synthesized by rapid thermal annealing (RTA) was presented. HRTEM reveals that annealing temperatures below 800°C produce fewer and smaller Ge nanocrystals compared to those produced at 800°C. Above 800°C, the nanocrystals formed have a wide range of size distribution. Therefore the optimum temperature is at 800°C to have uniformly sized and regularly spaced nanocrystals. RBS was performed to establish the Ge distribution in the SiO2 matrix during annealing.",

keywords = "Germanium, Nanocrystal, Raman spectroscopy, Rutherford backscattering, Transmission electron microscopy",

author = "Ho, {Y. W.} and V. Ng and Choi, {W. K.} and Ng, {S. P.} and T. Osipowicz and Seng, {H. L.} and Tjui, {W. W.} and K. Li",

year = "2001",

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doi = "10.1016/S1359-6462(01)00743-6",

language = "English (US)",

volume = "44",

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TY - JOUR

T1 - Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEM

AU - Ho, Y. W.

AU - Ng, V.

AU - Choi, W. K.

AU - Ng, S. P.

AU - Osipowicz, T.

AU - Seng, H. L.

AU - Tjui, W. W.

AU - Li, K.

PY - 2001/5/18

Y1 - 2001/5/18

N2 - The high resolution transmission electron microscopy (HRTEM), Rutherford backscattering spectroscopy (RBS) and Raman spectroscopy results of germanium nanocrystals embedded in SiO2 synthesized by rapid thermal annealing (RTA) was presented. HRTEM reveals that annealing temperatures below 800°C produce fewer and smaller Ge nanocrystals compared to those produced at 800°C. Above 800°C, the nanocrystals formed have a wide range of size distribution. Therefore the optimum temperature is at 800°C to have uniformly sized and regularly spaced nanocrystals. RBS was performed to establish the Ge distribution in the SiO2 matrix during annealing.

AB - The high resolution transmission electron microscopy (HRTEM), Rutherford backscattering spectroscopy (RBS) and Raman spectroscopy results of germanium nanocrystals embedded in SiO2 synthesized by rapid thermal annealing (RTA) was presented. HRTEM reveals that annealing temperatures below 800°C produce fewer and smaller Ge nanocrystals compared to those produced at 800°C. Above 800°C, the nanocrystals formed have a wide range of size distribution. Therefore the optimum temperature is at 800°C to have uniformly sized and regularly spaced nanocrystals. RBS was performed to establish the Ge distribution in the SiO2 matrix during annealing.

KW - Germanium

KW - Nanocrystal

KW - Raman spectroscopy

KW - Rutherford backscattering

KW - Transmission electron microscopy

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DO - 10.1016/S1359-6462(01)00743-6

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