Characteristic analysis on high power GaInP/AlGaInP semiconductor laser diodes

High power AlGaInP compressively strained separate confinement heterojunction quantum well laser diodes with real refractive index are successfully fabricated. The epitaxial growth of the laser is carried out by a one-step MOCVD using a 15°-misoriented GaAs substrate. The laser diodes have a ridge-waveguide with a 3 μm-wide, 900 μm-long, and 5%/95% coating. The typical threshold current of these devices is 32 mA, the COD threshold is 88 mW, and the continuous wave operation current and slope efficiency at 80 mW are 110 mA and 1 W/A, respectively. Stable fundamental-mode operation at 60 mW is obtained and the full angles at half-maximum power, perpendicular and parallel to the junction plane, are 32° and 10°, respectively. The lasing wavelength is 658.4 nm. The internal loss is 4.1 cm-1, the internal quantum efficiency is 80%, and the transparent current density is 648 A/cm2.