Characteristics of a band edge p-channel metal-oxide-semiconductor field effect transistors fabricated with a high-k / WAlx /TiSiN gate stack

Chang Seo Park; Muhamad M. Hussain; Gennadi Bersuker; Paul D. Kirsch; Raj Jammy

doi:10.1063/1.3464167

Characteristics of a band edge p-channel metal-oxide-semiconductor field effect transistors fabricated with a high-k / WAl_x /TiSiN gate stack

Chang Seo Park, Muhamad M. Hussain, Gennadi Bersuker, Paul D. Kirsch, Raj Jammy

Computer, Electrical and Mathematical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A metal/high-k gate stack with a p-type band edge effective work function (EWF) of about 5.0 eV is demonstrated using a thin WAl_x capping layer. The WAl_x stack exhibits a lower threshold voltage (higher flatband voltage) value and better equivalent oxide thickness scalability than previously reported high EWF gate stacks using an AlO_x cap. The WAl_x cap p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) show significantly improved negative bias temperature instability (NBTI) characteristics than AlO_x -capped pMOSFETs, which is attributed to negligible diffusion of Al into the interfacial oxide layer adjacent to the Si substrate.

Original language	English (US)
Article number	023501
Journal	Applied Physics Letters
Volume	97
Issue number	2
DOIs	https://doi.org/10.1063/1.3464167
State	Published - Jul 12 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Characteristics of a band edge p-channel metal-oxide-semiconductor field effect transistors fabricated with a high-k / WAlx /TiSiN gate stack",

abstract = "A metal/high-k gate stack with a p-type band edge effective work function (EWF) of about 5.0 eV is demonstrated using a thin WAlx capping layer. The WAlx stack exhibits a lower threshold voltage (higher flatband voltage) value and better equivalent oxide thickness scalability than previously reported high EWF gate stacks using an AlOx cap. The WAlx cap p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) show significantly improved negative bias temperature instability (NBTI) characteristics than AlOx -capped pMOSFETs, which is attributed to negligible diffusion of Al into the interfacial oxide layer adjacent to the Si substrate.",

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AU - Park, Chang Seo

AU - Hussain, Muhamad M.

AU - Bersuker, Gennadi

AU - Kirsch, Paul D.

AU - Jammy, Raj

PY - 2010/7/12

Y1 - 2010/7/12

N2 - A metal/high-k gate stack with a p-type band edge effective work function (EWF) of about 5.0 eV is demonstrated using a thin WAlx capping layer. The WAlx stack exhibits a lower threshold voltage (higher flatband voltage) value and better equivalent oxide thickness scalability than previously reported high EWF gate stacks using an AlOx cap. The WAlx cap p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) show significantly improved negative bias temperature instability (NBTI) characteristics than AlOx -capped pMOSFETs, which is attributed to negligible diffusion of Al into the interfacial oxide layer adjacent to the Si substrate.

AB - A metal/high-k gate stack with a p-type band edge effective work function (EWF) of about 5.0 eV is demonstrated using a thin WAlx capping layer. The WAlx stack exhibits a lower threshold voltage (higher flatband voltage) value and better equivalent oxide thickness scalability than previously reported high EWF gate stacks using an AlOx cap. The WAlx cap p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) show significantly improved negative bias temperature instability (NBTI) characteristics than AlOx -capped pMOSFETs, which is attributed to negligible diffusion of Al into the interfacial oxide layer adjacent to the Si substrate.

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Characteristics of a band edge p-channel metal-oxide-semiconductor field effect transistors fabricated with a high-k / WAl_x /TiSiN gate stack

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