Characteristics of p-type znse layers grown by molecular beam epitaxy with radical doping

Kazuhiro Ohkawa; Takeshi Karasawa; Tsuneo Mitsuyu

doi:10.1143/JJAP.30.L152

Characteristics of p-type znse layers grown by molecular beam epitaxy with radical doping

Kazuhiro Ohkawa, Takeshi Karasawa, Tsuneo Mitsuyu

Research output: Contribution to journal › Article › peer-review

102 Scopus citations

Abstract

p-type ZnSe layers have been grown by molecular beam epitaxy using nitrogen radical doping. We have employed Pt as the electrode material for p-type ZnSe. The Pt electrodes markedly reduced contact resistances. The p-type conduction was confirmed by Hall measurement. Carrier concentration was 4.4 x 1015 cm-3. Hall mobility was as high as 86 cm2/V-s because of good crystallinity. The p-type ZnSe layers exhibited the 2.616-eV emission from recombination between free electrons and acceptor holes (FA) in room-temperature photoluminescence measurement. The FA emission provides evidence that the layers are p-type ZnSe.

Original language	English (US)
Pages (from-to)	L152-L155
Journal	Japanese Journal of Applied Physics
Volume	30
Issue number	2
DOIs	https://doi.org/10.1143/JJAP.30.L152
State	Published - Feb 1991
Externally published	Yes

Keywords

Hall measurement
P-type
Photoluminescence
Pt electrode
ZnSe

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/JJAP.30.L152

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@article{d680d1b3a76e461c9df4c46cad75b5fc,

title = "Characteristics of p-type znse layers grown by molecular beam epitaxy with radical doping",

abstract = "p-type ZnSe layers have been grown by molecular beam epitaxy using nitrogen radical doping. We have employed Pt as the electrode material for p-type ZnSe. The Pt electrodes markedly reduced contact resistances. The p-type conduction was confirmed by Hall measurement. Carrier concentration was 4.4 x 1015 cm-3. Hall mobility was as high as 86 cm2/V-s because of good crystallinity. The p-type ZnSe layers exhibited the 2.616-eV emission from recombination between free electrons and acceptor holes (FA) in room-temperature photoluminescence measurement. The FA emission provides evidence that the layers are p-type ZnSe.",

keywords = "Hall measurement, P-type, Photoluminescence, Pt electrode, ZnSe",

author = "Kazuhiro Ohkawa and Takeshi Karasawa and Tsuneo Mitsuyu",

year = "1991",

month = feb,

doi = "10.1143/JJAP.30.L152",

language = "English (US)",

volume = "30",

pages = "L152--L155",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "2",

}

TY - JOUR

T1 - Characteristics of p-type znse layers grown by molecular beam epitaxy with radical doping

AU - Ohkawa, Kazuhiro

AU - Karasawa, Takeshi

AU - Mitsuyu, Tsuneo

PY - 1991/2

Y1 - 1991/2

N2 - p-type ZnSe layers have been grown by molecular beam epitaxy using nitrogen radical doping. We have employed Pt as the electrode material for p-type ZnSe. The Pt electrodes markedly reduced contact resistances. The p-type conduction was confirmed by Hall measurement. Carrier concentration was 4.4 x 1015 cm-3. Hall mobility was as high as 86 cm2/V-s because of good crystallinity. The p-type ZnSe layers exhibited the 2.616-eV emission from recombination between free electrons and acceptor holes (FA) in room-temperature photoluminescence measurement. The FA emission provides evidence that the layers are p-type ZnSe.

AB - p-type ZnSe layers have been grown by molecular beam epitaxy using nitrogen radical doping. We have employed Pt as the electrode material for p-type ZnSe. The Pt electrodes markedly reduced contact resistances. The p-type conduction was confirmed by Hall measurement. Carrier concentration was 4.4 x 1015 cm-3. Hall mobility was as high as 86 cm2/V-s because of good crystallinity. The p-type ZnSe layers exhibited the 2.616-eV emission from recombination between free electrons and acceptor holes (FA) in room-temperature photoluminescence measurement. The FA emission provides evidence that the layers are p-type ZnSe.

KW - Hall measurement

KW - P-type

KW - Photoluminescence

KW - Pt electrode

KW - ZnSe

UR - http://www.scopus.com/inward/record.url?scp=0026108650&partnerID=8YFLogxK

U2 - 10.1143/JJAP.30.L152

DO - 10.1143/JJAP.30.L152

M3 - Article

AN - SCOPUS:0026108650

SN - 0021-4922

VL - 30

SP - L152-L155

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 2

ER -

Characteristics of p-type znse layers grown by molecular beam epitaxy with radical doping

Abstract

Keywords

ASJC Scopus subject areas

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