Characteristics of staggered InGaN quantum wells light-emitting diodes emitting at 480-525 nm

Hongping Zhao; G. S. Huang; Guangyu Liu; Xiaohang Li; Jonathan D. Poplawsky; S. Tafon Penn; Volkmar Dierolf; Nelson Tansu

doi:10.1109/DRC.2009.5354899

Characteristics of staggered InGaN quantum wells light-emitting diodes emitting at 480-525 nm

Hongping Zhao^*, G. S. Huang, Guangyu Liu, Xiaohang Li, Jonathan D. Poplawsky, S. Tafon Penn, Volkmar Dierolf, Nelson Tansu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The pursuit of high-efficiency InGaN quantum wells (QWs) emitting in green spectral regime (λ∼ 520 nm) has tremendous impact for solid state lighting and green diode lasers. However, due to the existence of polarization field in InGaN QW, band bending in the QW leads to charge separation resulting in reduction of the electron-hole wave function overlap (Γe-hh) and the radiative recombination rate (∼|Γe-hh|2) in particular for green emission wavelength. Recently, several approaches are proposed to enhance the Γe-hh for the InGaN QW as follow 1) staggered InGaN QW [1], 2) type-II InGaN-GaNAs QW [2], and 3) non-polar InGaN QW [3].

Original language	English (US)
Title of host publication	67th Device Research Conference, DRC 2009
Pages	221-222
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2009.5354899
State	Published - Dec 11 2009
Externally published	Yes
Event	67th Device Research Conference, DRC 2009 - University Park, PA, United States Duration: Jun 22 2009 → Jun 24 2009

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	67th Device Research Conference, DRC 2009
Country/Territory	United States
City	University Park, PA
Period	06/22/09 → 06/24/09

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/DRC.2009.5354899

Cite this

Zhao, H., Huang, G. S., Liu, G., Li, X., Poplawsky, J. D., Penn, S. T., Dierolf, V., & Tansu, N. (2009). Characteristics of staggered InGaN quantum wells light-emitting diodes emitting at 480-525 nm. In 67th Device Research Conference, DRC 2009 (pp. 221-222). Article 5354899 (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2009.5354899

@inproceedings{fc28a6b6d07b40a3870e77353cdc1bc8,

title = "Characteristics of staggered InGaN quantum wells light-emitting diodes emitting at 480-525 nm",

abstract = "The pursuit of high-efficiency InGaN quantum wells (QWs) emitting in green spectral regime (λ∼ 520 nm) has tremendous impact for solid state lighting and green diode lasers. However, due to the existence of polarization field in InGaN QW, band bending in the QW leads to charge separation resulting in reduction of the electron-hole wave function overlap (Γe-hh) and the radiative recombination rate (∼|Γe-hh|2) in particular for green emission wavelength. Recently, several approaches are proposed to enhance the Γe-hh for the InGaN QW as follow 1) staggered InGaN QW [1], 2) type-II InGaN-GaNAs QW [2], and 3) non-polar InGaN QW [3].",

author = "Hongping Zhao and Huang, {G. S.} and Guangyu Liu and Xiaohang Li and Poplawsky, {Jonathan D.} and Penn, {S. Tafon} and Volkmar Dierolf and Nelson Tansu",

year = "2009",

month = dec,

day = "11",

doi = "10.1109/DRC.2009.5354899",

language = "English (US)",

isbn = "9781424435289",

series = "Device Research Conference - Conference Digest, DRC",

pages = "221--222",

booktitle = "67th Device Research Conference, DRC 2009",

note = "67th Device Research Conference, DRC 2009 ; Conference date: 22-06-2009 Through 24-06-2009",

}

Zhao, H, Huang, GS, Liu, G, Li, X, Poplawsky, JD, Penn, ST, Dierolf, V & Tansu, N 2009, Characteristics of staggered InGaN quantum wells light-emitting diodes emitting at 480-525 nm. in 67th Device Research Conference, DRC 2009., 5354899, Device Research Conference - Conference Digest, DRC, pp. 221-222, 67th Device Research Conference, DRC 2009, University Park, PA, United States, 06/22/09. https://doi.org/10.1109/DRC.2009.5354899

Characteristics of staggered InGaN quantum wells light-emitting diodes emitting at 480-525 nm. / Zhao, Hongping; Huang, G. S.; Liu, Guangyu et al.
67th Device Research Conference, DRC 2009. 2009. p. 221-222 5354899 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Characteristics of staggered InGaN quantum wells light-emitting diodes emitting at 480-525 nm

AU - Zhao, Hongping

AU - Huang, G. S.

AU - Liu, Guangyu

AU - Li, Xiaohang

AU - Poplawsky, Jonathan D.

AU - Penn, S. Tafon

AU - Dierolf, Volkmar

AU - Tansu, Nelson

PY - 2009/12/11

Y1 - 2009/12/11

N2 - The pursuit of high-efficiency InGaN quantum wells (QWs) emitting in green spectral regime (λ∼ 520 nm) has tremendous impact for solid state lighting and green diode lasers. However, due to the existence of polarization field in InGaN QW, band bending in the QW leads to charge separation resulting in reduction of the electron-hole wave function overlap (Γe-hh) and the radiative recombination rate (∼|Γe-hh|2) in particular for green emission wavelength. Recently, several approaches are proposed to enhance the Γe-hh for the InGaN QW as follow 1) staggered InGaN QW [1], 2) type-II InGaN-GaNAs QW [2], and 3) non-polar InGaN QW [3].

AB - The pursuit of high-efficiency InGaN quantum wells (QWs) emitting in green spectral regime (λ∼ 520 nm) has tremendous impact for solid state lighting and green diode lasers. However, due to the existence of polarization field in InGaN QW, band bending in the QW leads to charge separation resulting in reduction of the electron-hole wave function overlap (Γe-hh) and the radiative recombination rate (∼|Γe-hh|2) in particular for green emission wavelength. Recently, several approaches are proposed to enhance the Γe-hh for the InGaN QW as follow 1) staggered InGaN QW [1], 2) type-II InGaN-GaNAs QW [2], and 3) non-polar InGaN QW [3].

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Characteristics of staggered InGaN quantum wells light-emitting diodes emitting at 480-525 nm

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