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Characteristics of staggered InGaN quantum wells light-emitting diodes emitting at 480-525 nm
Hongping Zhao*, G. S. Huang, Guangyu Liu, Xiaohang Li, Jonathan D. Poplawsky, S. Tafon Penn, Volkmar Dierolf, Nelson Tansu
*Corresponding author for this work
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review