Characterization of a-plane AlGaN/GaN heterostructure grown on r-plane sapphire substrate

M. Iwaya, Y. Okadome, Y. Tsuchiya, D. Iida, A. Miura, H. Furukawa, A. Honshio, Y. Miyake, S. Kamiyama, H. Amano, I. Akasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


The anisotropically biaxial strain in a-plane AlGaN on GaN is investigated by X-ray diffraction analysis of the heterostructure of AlGaN and GaN grown on r-plane sapphire. The AlGaN layer with a low AlN molar fraction or small thickness is coherently grown on the GaN layer both along the m-axis and c-axis. An increase in AlN molar fraction or thickness in AlGaN, results in a slight relaxation of AlGaN only in one direction due to tensile stress along the c-axis, which is caused by the underlying GaN layer during the growth. The cause of the relaxation of AlGaN in one direction is thought to be a large anisotropically biaxial stress. © 2006 Materials Research Society.
Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Number of pages6
StatePublished - May 15 2006
Externally publishedYes


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