Characterization of a-plane AlGaN/GaN heterostructure grown on r-plane sapphire substrate

M. Iwaya; Y. Okadome; Y. Tsuchiya; D. Iida; A. Miura; H. Furukawa; A. Honshio; Y. Miyake; S. Kamiyama; H. Amano; I. Akasaki

Characterization of a-plane AlGaN/GaN heterostructure grown on r-plane sapphire substrate

M. Iwaya, Y. Okadome, Y. Tsuchiya, D. Iida, A. Miura, H. Furukawa, A. Honshio, Y. Miyake, S. Kamiyama, H. Amano, I. Akasaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The anisotropically biaxial strain in a-plane AlGaN on GaN is investigated by X-ray diffraction analysis of the heterostructure of AlGaN and GaN grown on r-plane sapphire. The AlGaN layer with a low AlN molar fraction or small thickness is coherently grown on the GaN layer both along the m-axis and c-axis. An increase in AlN molar fraction or thickness in AlGaN, results in a slight relaxation of AlGaN only in one direction due to tensile stress along the c-axis, which is caused by the underlying GaN layer during the growth. The cause of the relaxation of AlGaN in one direction is thought to be a large anisotropically biaxial stress. © 2006 Materials Research Society.

Original language	English (US)
Title of host publication	Materials Research Society Symposium Proceedings
Pages	225-230
Number of pages	6
State	Published - Aug 23 2006
Externally published	Yes

Cite this

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title = "Characterization of a-plane AlGaN/GaN heterostructure grown on r-plane sapphire substrate",

abstract = "The anisotropically biaxial strain in a-plane AlGaN on GaN is investigated by X-ray diffraction analysis of the heterostructure of AlGaN and GaN grown on r-plane sapphire. The AlGaN layer with a low AlN molar fraction or small thickness is coherently grown on the GaN layer both along the m-axis and c-axis. An increase in AlN molar fraction or thickness in AlGaN, results in a slight relaxation of AlGaN only in one direction due to tensile stress along the c-axis, which is caused by the underlying GaN layer during the growth. The cause of the relaxation of AlGaN in one direction is thought to be a large anisotropically biaxial stress. {\textcopyright} 2006 Materials Research Society.",

author = "M. Iwaya and Y. Okadome and Y. Tsuchiya and D. Iida and A. Miura and H. Furukawa and A. Honshio and Y. Miyake and S. Kamiyama and H. Amano and I. Akasaki",

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language = "English (US)",

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T1 - Characterization of a-plane AlGaN/GaN heterostructure grown on r-plane sapphire substrate

AU - Iwaya, M.

AU - Okadome, Y.

AU - Tsuchiya, Y.

AU - Iida, D.

AU - Miura, A.

AU - Furukawa, H.

AU - Honshio, A.

AU - Miyake, Y.

AU - Kamiyama, S.

AU - Amano, H.

AU - Akasaki, I.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2006/8/23

Y1 - 2006/8/23

N2 - The anisotropically biaxial strain in a-plane AlGaN on GaN is investigated by X-ray diffraction analysis of the heterostructure of AlGaN and GaN grown on r-plane sapphire. The AlGaN layer with a low AlN molar fraction or small thickness is coherently grown on the GaN layer both along the m-axis and c-axis. An increase in AlN molar fraction or thickness in AlGaN, results in a slight relaxation of AlGaN only in one direction due to tensile stress along the c-axis, which is caused by the underlying GaN layer during the growth. The cause of the relaxation of AlGaN in one direction is thought to be a large anisotropically biaxial stress. © 2006 Materials Research Society.

AB - The anisotropically biaxial strain in a-plane AlGaN on GaN is investigated by X-ray diffraction analysis of the heterostructure of AlGaN and GaN grown on r-plane sapphire. The AlGaN layer with a low AlN molar fraction or small thickness is coherently grown on the GaN layer both along the m-axis and c-axis. An increase in AlN molar fraction or thickness in AlGaN, results in a slight relaxation of AlGaN only in one direction due to tensile stress along the c-axis, which is caused by the underlying GaN layer during the growth. The cause of the relaxation of AlGaN in one direction is thought to be a large anisotropically biaxial stress. © 2006 Materials Research Society.

UR - http://www.scopus.com/inward/record.url?scp=33747330656&partnerID=8YFLogxK

M3 - Conference contribution

SN - 1558998454

SP - 225

EP - 230

BT - Materials Research Society Symposium Proceedings

ER -

Characterization of a-plane AlGaN/GaN heterostructure grown on r-plane sapphire substrate

Abstract

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