TY - JOUR
T1 - Characterization of current transport in ferroelectric polymer devices
AU - Hanna, Amir
AU - Bhansali, Unnat Sampatraj
AU - Khan, Yasser
AU - Alshareef, Husam N.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors would like to acknowledge M.N. Al-Madhoun for his help in device fabrication and valuable discussions. The authors also acknowledge the generous financial support from the KAUST baseline fund and Saudi Basic Industries (SABIC) Grant No. 2000000015.
PY - 2014/1
Y1 - 2014/1
N2 - We report the charge injection characteristics in poly(vinylidene fluoride-trifluoroethylene), P(VDF-TrFE), as a function of electrode material in metal/ferroelectric/metal device structures. Symmetric and asymmetric devices with Al, Ag, Au and Pt electrodes were fabricated to determine the dominant carrier type, injection current density, and to propose transport mechanisms in the ferroelectric polymer. Higher work function metals such as Pt are found to inject less charges compared to lower work function metals, implying n-type conduction behavior for P(VDF-TrFE) with electrons as the dominant injected carrier. Two distinct charge transport regimes were identified in the P(VDF-TrFE) devices; a Schottky-limited conduction regime for low to intermediate fields (E < 20 MV/m), and a space-charge limited conduction (SCLC) regime for high fields (20 < E < 120 MV/m). Implication of these results for degradation in P(VDF-TrFE) memory performance are discussed. © 2013 Elsevier B.V. All rights reserved.
AB - We report the charge injection characteristics in poly(vinylidene fluoride-trifluoroethylene), P(VDF-TrFE), as a function of electrode material in metal/ferroelectric/metal device structures. Symmetric and asymmetric devices with Al, Ag, Au and Pt electrodes were fabricated to determine the dominant carrier type, injection current density, and to propose transport mechanisms in the ferroelectric polymer. Higher work function metals such as Pt are found to inject less charges compared to lower work function metals, implying n-type conduction behavior for P(VDF-TrFE) with electrons as the dominant injected carrier. Two distinct charge transport regimes were identified in the P(VDF-TrFE) devices; a Schottky-limited conduction regime for low to intermediate fields (E < 20 MV/m), and a space-charge limited conduction (SCLC) regime for high fields (20 < E < 120 MV/m). Implication of these results for degradation in P(VDF-TrFE) memory performance are discussed. © 2013 Elsevier B.V. All rights reserved.
UR - http://hdl.handle.net/10754/563292
UR - https://linkinghub.elsevier.com/retrieve/pii/S1566119913004540
UR - http://www.scopus.com/inward/record.url?scp=84887605669&partnerID=8YFLogxK
U2 - 10.1016/j.orgel.2013.10.009
DO - 10.1016/j.orgel.2013.10.009
M3 - Article
SN - 1566-1199
VL - 15
SP - 22
EP - 28
JO - Organic Electronics
JF - Organic Electronics
IS - 1
ER -