Characterization of Er-doped ZnO nanorod arrays for broadband antireflection

Cheng Ying Chen; Yen Chun Chao; Chin An Lin; Jian Wei Lo; Jr Hau He

doi:10.1109/INEC.2010.5424868

Characterization of Er-doped ZnO nanorod arrays for broadband antireflection

Cheng Ying Chen, Yen Chun Chao^*, Chin An Lin, Jian Wei Lo, Jr Hau He

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We demonstrate a practical optoelectronic application of of Er-doped ZnO nanorod arrays (NRAs) synthesized by hydrothermal method serving as an antireflection (AR) coating. Er-doped ZnO NRAs exhibits broadband AR characteristics for unpolarized, TE-polarized, and TM-polarized lights. Due to growth on any surface of devices/substrates with ease, broadband AR characteristics, Er-doped ZnO NRAs can benefit greatly the performance of optoelectronic devices, such as light emitting diodes and solar cells.

Original language	English (US)
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	1339-1340
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424868
State	Published - 2010
Externally published	Yes
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: Jan 3 2010 → Jan 8 2010

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other	2010 3rd International Nanoelectronics Conference, INEC 2010
Country/Territory	China
City	Hongkong
Period	01/3/10 → 01/8/10

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/INEC.2010.5424868

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Chen, C. Y., Chao, Y. C., Lin, C. A., Lo, J. W., & He, J. H. (2010). Characterization of Er-doped ZnO nanorod arrays for broadband antireflection. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1339-1340). Article 5424868 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424868

@inproceedings{cb8c9fd7f3c044beb13468d703165a1b,

title = "Characterization of Er-doped ZnO nanorod arrays for broadband antireflection",

abstract = "We demonstrate a practical optoelectronic application of of Er-doped ZnO nanorod arrays (NRAs) synthesized by hydrothermal method serving as an antireflection (AR) coating. Er-doped ZnO NRAs exhibits broadband AR characteristics for unpolarized, TE-polarized, and TM-polarized lights. Due to growth on any surface of devices/substrates with ease, broadband AR characteristics, Er-doped ZnO NRAs can benefit greatly the performance of optoelectronic devices, such as light emitting diodes and solar cells.",

author = "Chen, {Cheng Ying} and Chao, {Yen Chun} and Lin, {Chin An} and Lo, {Jian Wei} and He, {Jr Hau}",

year = "2010",

doi = "10.1109/INEC.2010.5424868",

language = "English (US)",

isbn = "9781424435449",

series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

pages = "1339--1340",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

}

Chen, CY, Chao, YC, Lin, CA, Lo, JW & He, JH 2010, Characterization of Er-doped ZnO nanorod arrays for broadband antireflection. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424868, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 1339-1340, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 01/3/10. https://doi.org/10.1109/INEC.2010.5424868

Characterization of Er-doped ZnO nanorod arrays for broadband antireflection. / Chen, Cheng Ying; Chao, Yen Chun; Lin, Chin An et al.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1339-1340 5424868 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Characterization of Er-doped ZnO nanorod arrays for broadband antireflection

AU - Chen, Cheng Ying

AU - Chao, Yen Chun

AU - Lin, Chin An

AU - Lo, Jian Wei

AU - He, Jr Hau

PY - 2010

Y1 - 2010

N2 - We demonstrate a practical optoelectronic application of of Er-doped ZnO nanorod arrays (NRAs) synthesized by hydrothermal method serving as an antireflection (AR) coating. Er-doped ZnO NRAs exhibits broadband AR characteristics for unpolarized, TE-polarized, and TM-polarized lights. Due to growth on any surface of devices/substrates with ease, broadband AR characteristics, Er-doped ZnO NRAs can benefit greatly the performance of optoelectronic devices, such as light emitting diodes and solar cells.

AB - We demonstrate a practical optoelectronic application of of Er-doped ZnO nanorod arrays (NRAs) synthesized by hydrothermal method serving as an antireflection (AR) coating. Er-doped ZnO NRAs exhibits broadband AR characteristics for unpolarized, TE-polarized, and TM-polarized lights. Due to growth on any surface of devices/substrates with ease, broadband AR characteristics, Er-doped ZnO NRAs can benefit greatly the performance of optoelectronic devices, such as light emitting diodes and solar cells.

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U2 - 10.1109/INEC.2010.5424868

DO - 10.1109/INEC.2010.5424868

M3 - Conference contribution

AN - SCOPUS:77951662101

SN - 9781424435449

T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

SP - 1339

EP - 1340

BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010

Y2 - 3 January 2010 through 8 January 2010

ER -

Characterization of Er-doped ZnO nanorod arrays for broadband antireflection

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