Characterization of Er in porous Si

Guido Mula; Susanna Setzu; Gianluca Manunza; Roberta Ruffilli; Andrea Falqui

doi:10.1186/1556-276X-7-376

Characterization of Er in porous Si

Guido Mula^*, Susanna Setzu, Gianluca Manunza, Roberta Ruffilli, Andrea Falqui

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The fabrication of porous Si-based Er-doped light-emitting devices is a very promising developing field for all-silicon light emitters. However, while luminescence of Er-doped porous silicon devices has been demonstrated, very little attention has been devoted to the doping process itself. We have undertaken a detailed study of this process, examining the porous silicon matrix from several points of view during and after the doping. In particular, we have found that the Er-doping process shows a threshold level which, as evidenced by the cross correlation of the various techniques used, does depend on the sample thickness and on the doping parameters.

Original language	English (US)
Article number	376
Journal	Nanoscale Research Letters
Volume	7
DOIs	https://doi.org/10.1186/1556-276X-7-376
State	Published - 2012
Externally published	Yes

Keywords

Er doping
Light-emitting devices
Porous silicon
Refractive index

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

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10.1186/1556-276X-7-376

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title = "Characterization of Er in porous Si",

abstract = "The fabrication of porous Si-based Er-doped light-emitting devices is a very promising developing field for all-silicon light emitters. However, while luminescence of Er-doped porous silicon devices has been demonstrated, very little attention has been devoted to the doping process itself. We have undertaken a detailed study of this process, examining the porous silicon matrix from several points of view during and after the doping. In particular, we have found that the Er-doping process shows a threshold level which, as evidenced by the cross correlation of the various techniques used, does depend on the sample thickness and on the doping parameters.",

keywords = "Er doping, Light-emitting devices, Porous silicon, Refractive index",

author = "Guido Mula and Susanna Setzu and Gianluca Manunza and Roberta Ruffilli and Andrea Falqui",

note = "Funding Information: This work was financially supported by the 851/DSPAR/2003 project funded by the Italian Ministry of University and Research. Dr. Michele Saba of the University of Cagliari is gratefully acknowledged for the useful discussions.",

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doi = "10.1186/1556-276X-7-376",

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T1 - Characterization of Er in porous Si

AU - Mula, Guido

AU - Setzu, Susanna

AU - Manunza, Gianluca

AU - Ruffilli, Roberta

AU - Falqui, Andrea

N1 - Funding Information: This work was financially supported by the 851/DSPAR/2003 project funded by the Italian Ministry of University and Research. Dr. Michele Saba of the University of Cagliari is gratefully acknowledged for the useful discussions.

PY - 2012

Y1 - 2012

N2 - The fabrication of porous Si-based Er-doped light-emitting devices is a very promising developing field for all-silicon light emitters. However, while luminescence of Er-doped porous silicon devices has been demonstrated, very little attention has been devoted to the doping process itself. We have undertaken a detailed study of this process, examining the porous silicon matrix from several points of view during and after the doping. In particular, we have found that the Er-doping process shows a threshold level which, as evidenced by the cross correlation of the various techniques used, does depend on the sample thickness and on the doping parameters.

AB - The fabrication of porous Si-based Er-doped light-emitting devices is a very promising developing field for all-silicon light emitters. However, while luminescence of Er-doped porous silicon devices has been demonstrated, very little attention has been devoted to the doping process itself. We have undertaken a detailed study of this process, examining the porous silicon matrix from several points of view during and after the doping. In particular, we have found that the Er-doping process shows a threshold level which, as evidenced by the cross correlation of the various techniques used, does depend on the sample thickness and on the doping parameters.

KW - Er doping

KW - Light-emitting devices

KW - Porous silicon

KW - Refractive index

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DO - 10.1186/1556-276X-7-376

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SN - 1931-7573

VL - 7

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

M1 - 376

ER -

Characterization of Er in porous Si

Abstract

Keywords

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