Characterization of GaN E-mode HEMT Devices by In-Situ STEM Electrical Biasing

Abhas Mehta; Qingxiao Wang; Sam Shichijo; M.J. Kim

doi:10.1017/s1431927622008741

Characterization of GaN E-mode HEMT Devices by In-Situ STEM Electrical Biasing

Abhas Mehta, Qingxiao Wang, Sam Shichijo, M.J. Kim

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	2276-2277
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	28
Issue number	S1
DOIs	https://doi.org/10.1017/s1431927622008741
State	Published - Jul 22 2022

ASJC Scopus subject areas

Instrumentation

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10.1017/s1431927622008741

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title = "Characterization of GaN E-mode HEMT Devices by In-Situ STEM Electrical Biasing",

author = "Abhas Mehta and Qingxiao Wang and Sam Shichijo and M.J. Kim",

note = "KAUST Repository Item: Exported on 2022-09-14",

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issn = "1431-9276",

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T1 - Characterization of GaN E-mode HEMT Devices by In-Situ STEM Electrical Biasing

AU - Mehta, Abhas

AU - Wang, Qingxiao

AU - Shichijo, Sam

AU - Kim, M.J.

N1 - KAUST Repository Item: Exported on 2022-09-14

PY - 2022/7/22

Y1 - 2022/7/22

UR - http://hdl.handle.net/10754/679875

UR - https://www.cambridge.org/core/product/identifier/S1431927622008741/type/journal_article

U2 - 10.1017/s1431927622008741

DO - 10.1017/s1431927622008741

M3 - Article

SN - 1431-9276

VL - 28

SP - 2276

EP - 2277

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

IS - S1

ER -

Characterization of GaN E-mode HEMT Devices by In-Situ STEM Electrical Biasing

ASJC Scopus subject areas

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