Characterization of InGaN/GaN Fibonacci superlattices grown by two-flow metalorganic vapor phase epitaxy

A quasiperiodic system of InGaN/GaN superlattices, grown by two-flow metalorganic vapor phase epitaxy on sapphire substrates, was investgated for the first time. The superlattice structure consisted of an alternative stack of InGaN and GaN thin films to form a Fibonacci sequence. In the X-ray ω-2θ (0002) spectrum, many diffracted satellite peaks from Fibonacci superlattices were observed, but not Bragg-like ones, which resulted from the no-periodicity feature of Fibonacci superlattices. It was found that satellite peaks are characterized as a fractal behavior. And it was considered that moderately large interface fractuation in the sequential deposition of the superlattice does not appear to disturbe the quasiperiodic order of Fibonaci InGaN/GaN superlattices.