Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs

T. Kawashima; T. Nagai; D. Iida; A. Miura; Y. Okadome; Y. Tsuchiya; M. Iwaya; S. Kamiyama; H. Amano; I. Akasaki

doi:10.1117/12.717182

Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs

T. Kawashima, T. Nagai, D. Iida, A. Miura, Y. Okadome, Y. Tsuchiya, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We report on low-defect-density non-polar a-plane and m-plane GaN films grown by sidewall epitaxial lateral overgrowth (SELO) technique. Dislocations and stacking faults were decreased markedly over the whole area, and surface roughness was decreased with decreasing defect density. The photoluminescence intensity of SELO a-plane and m-plane GaN was about 200 times higher than that of a-plane and m-plane GaN template. We also fabricated and characterized LEDs on a-plane and m-plane GaN using SELO technique. The light power of LEDs increased with decreasing of threading dislocation.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
DOIs	https://doi.org/10.1117/12.717182
State	Published - May 22 2007
Externally published	Yes

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title = "Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs",

abstract = "We report on low-defect-density non-polar a-plane and m-plane GaN films grown by sidewall epitaxial lateral overgrowth (SELO) technique. Dislocations and stacking faults were decreased markedly over the whole area, and surface roughness was decreased with decreasing defect density. The photoluminescence intensity of SELO a-plane and m-plane GaN was about 200 times higher than that of a-plane and m-plane GaN template. We also fabricated and characterized LEDs on a-plane and m-plane GaN using SELO technique. The light power of LEDs increased with decreasing of threading dislocation.",

author = "T. Kawashima and T. Nagai and D. Iida and A. Miura and Y. Okadome and Y. Tsuchiya and M. Iwaya and S. Kamiyama and H. Amano and I. Akasaki",

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doi = "10.1117/12.717182",

language = "English (US)",

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T1 - Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs

AU - Kawashima, T.

AU - Nagai, T.

AU - Iida, D.

AU - Miura, A.

AU - Okadome, Y.

AU - Tsuchiya, Y.

AU - Iwaya, M.

AU - Kamiyama, S.

AU - Amano, H.

AU - Akasaki, I.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2007/5/22

Y1 - 2007/5/22

N2 - We report on low-defect-density non-polar a-plane and m-plane GaN films grown by sidewall epitaxial lateral overgrowth (SELO) technique. Dislocations and stacking faults were decreased markedly over the whole area, and surface roughness was decreased with decreasing defect density. The photoluminescence intensity of SELO a-plane and m-plane GaN was about 200 times higher than that of a-plane and m-plane GaN template. We also fabricated and characterized LEDs on a-plane and m-plane GaN using SELO technique. The light power of LEDs increased with decreasing of threading dislocation.

AB - We report on low-defect-density non-polar a-plane and m-plane GaN films grown by sidewall epitaxial lateral overgrowth (SELO) technique. Dislocations and stacking faults were decreased markedly over the whole area, and surface roughness was decreased with decreasing defect density. The photoluminescence intensity of SELO a-plane and m-plane GaN was about 200 times higher than that of a-plane and m-plane GaN template. We also fabricated and characterized LEDs on a-plane and m-plane GaN using SELO technique. The light power of LEDs increased with decreasing of threading dislocation.

UR - http://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.717182

UR - http://www.scopus.com/inward/record.url?scp=34248545901&partnerID=8YFLogxK

U2 - 10.1117/12.717182

DO - 10.1117/12.717182

M3 - Conference contribution

SN - 081946581X

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs

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