Characterization of reactive ion etching of sol-gel SiO2 using Taguchi optimization method

Terence C.L. Wee; Boon Siew Ooi; Yan Zhou; Yuen Chuen Chan; Yee Loy Lam

doi:10.1117/12.370344

Characterization of reactive ion etching of sol-gel SiO₂ using Taguchi optimization method

Terence C.L. Wee^*, Boon Siew Ooi, Yan Zhou, Yuen Chuen Chan, Yee Loy Lam

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

SiO₂ films prepared using sol-gel technique have found enormous potential applications in photonics, electronics and sensor devices. However, the feasibility of the devices utilizing sol-gel technology lies on the ease of the fabrication processes such as patterns transfer using wet or dry etchings. Dry etching is preferred over wet etching as it is able to produce finer features with high anisotropic etch profile. In this paper, we report the development of a dry reactive ion etching (RIE) process for sol-gel SiO₂ using a mixture of CF₄ and O₂ plasma. Parameters such as RF power, chamber pressure, CF₄ and O₂ flow rate, were optimized using a statistical method called Taguchi Technique. Etch rate of as high as 50nm/min, with high anisotropy etched profile, has been obtained.

Original language	English (US)
Pages (from-to)	438-444
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3896
DOIs	https://doi.org/10.1117/12.370344
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices - Singapore, Singapore Duration: Nov 30 1999 → Dec 3 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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Cite this

@article{c48495dd5cc34291bc9868acc80cc203,

title = "Characterization of reactive ion etching of sol-gel SiO2 using Taguchi optimization method",

abstract = "SiO2 films prepared using sol-gel technique have found enormous potential applications in photonics, electronics and sensor devices. However, the feasibility of the devices utilizing sol-gel technology lies on the ease of the fabrication processes such as patterns transfer using wet or dry etchings. Dry etching is preferred over wet etching as it is able to produce finer features with high anisotropic etch profile. In this paper, we report the development of a dry reactive ion etching (RIE) process for sol-gel SiO2 using a mixture of CF4 and O2 plasma. Parameters such as RF power, chamber pressure, CF4 and O2 flow rate, were optimized using a statistical method called Taguchi Technique. Etch rate of as high as 50nm/min, with high anisotropy etched profile, has been obtained.",

author = "Wee, {Terence C.L.} and Ooi, {Boon Siew} and Yan Zhou and Chan, {Yuen Chuen} and Lam, {Yee Loy}",

year = "1999",

doi = "10.1117/12.370344",

language = "English (US)",

volume = "3896",

pages = "438--444",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices ; Conference date: 30-11-1999 Through 03-12-1999",

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TY - JOUR

T1 - Characterization of reactive ion etching of sol-gel SiO2 using Taguchi optimization method

AU - Wee, Terence C.L.

AU - Ooi, Boon Siew

AU - Zhou, Yan

AU - Chan, Yuen Chuen

AU - Lam, Yee Loy

PY - 1999

Y1 - 1999

N2 - SiO2 films prepared using sol-gel technique have found enormous potential applications in photonics, electronics and sensor devices. However, the feasibility of the devices utilizing sol-gel technology lies on the ease of the fabrication processes such as patterns transfer using wet or dry etchings. Dry etching is preferred over wet etching as it is able to produce finer features with high anisotropic etch profile. In this paper, we report the development of a dry reactive ion etching (RIE) process for sol-gel SiO2 using a mixture of CF4 and O2 plasma. Parameters such as RF power, chamber pressure, CF4 and O2 flow rate, were optimized using a statistical method called Taguchi Technique. Etch rate of as high as 50nm/min, with high anisotropy etched profile, has been obtained.

AB - SiO2 films prepared using sol-gel technique have found enormous potential applications in photonics, electronics and sensor devices. However, the feasibility of the devices utilizing sol-gel technology lies on the ease of the fabrication processes such as patterns transfer using wet or dry etchings. Dry etching is preferred over wet etching as it is able to produce finer features with high anisotropic etch profile. In this paper, we report the development of a dry reactive ion etching (RIE) process for sol-gel SiO2 using a mixture of CF4 and O2 plasma. Parameters such as RF power, chamber pressure, CF4 and O2 flow rate, were optimized using a statistical method called Taguchi Technique. Etch rate of as high as 50nm/min, with high anisotropy etched profile, has been obtained.

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U2 - 10.1117/12.370344

DO - 10.1117/12.370344

M3 - Conference article

AN - SCOPUS:0033317449

SN - 0277-786X

VL - 3896

SP - 438

EP - 444

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices

Y2 - 30 November 1999 through 3 December 1999

ER -

Characterization of reactive ion etching of sol-gel SiO₂ using Taguchi optimization method

Abstract

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