Characterization of sol-gel SiO2:Ce,Tb powder and pulsed laser deposited thin film phosphors

O. M. Ntwaeaborwa; M. S. Dhlamini; R. A. Harris; J. R. Botha; Ulrich Buttner; H. C. Swart

doi:10.1002/pssc.200776807

Characterization of sol-gel SiO₂:Ce,Tb powder and pulsed laser deposited thin film phosphors

O. M. Ntwaeaborwa, M. S. Dhlamini, R. A. Harris, J. R. Botha, Ulrich Buttner, H. C. Swart

Research output: Contribution to journal › Conference article › peer-review

Abstract

Thin films of SiO₂:Ce,Tb (Ce = Tb = 0.5 mol%) nanoparticulate phosphor (nanophosphor) were ablated on Si (100) substrates using either the conventional pulsed laser deposition (PLD) or pulsed reactive crossed beam laser ablation (PRCLA) technique. Morphology and surface topography of the films were analysed with scanning electron microscopy (SEM) and atomic force microscopy (AFM) respectively. The chemical composition and thicknesses of the films were determined by Rutherford backscattering spectroscopy (RBS). Luminescence properties of the films were studied with cathodoluminescence (CL) spectroscopy and a 325 nm HeCd laser. Enhanced green cathodoluminescence and photoluminescence (PL) associated with 5D4→7F4 transitions in Tb3+ was observed at ∼540 nm in powder and thin film samples, and is attributed to non-radiative energy transfer from codoped Ce3+. Luminescence intensities of the films and that of the SiO2:Ce,Tb powder used to make the films are compared.

Original language	English (US)
Pages (from-to)	602-605
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	5
Issue number	2
DOIs	https://doi.org/10.1002/pssc.200776807
State	Published - Dec 1 2008
Event	E-MRS 2007 Spring Meeting-Symposium F - Novel Gain Materials and Devices Based on III-N-V Compounds - Strasbourg, France Duration: May 28 2007 → Jun 1 2007

ASJC Scopus subject areas

Condensed Matter Physics

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title = "Characterization of sol-gel SiO2:Ce,Tb powder and pulsed laser deposited thin film phosphors",

abstract = "Thin films of SiO2:Ce,Tb (Ce = Tb = 0.5 mol%) nanoparticulate phosphor (nanophosphor) were ablated on Si (100) substrates using either the conventional pulsed laser deposition (PLD) or pulsed reactive crossed beam laser ablation (PRCLA) technique. Morphology and surface topography of the films were analysed with scanning electron microscopy (SEM) and atomic force microscopy (AFM) respectively. The chemical composition and thicknesses of the films were determined by Rutherford backscattering spectroscopy (RBS). Luminescence properties of the films were studied with cathodoluminescence (CL) spectroscopy and a 325 nm HeCd laser. Enhanced green cathodoluminescence and photoluminescence (PL) associated with 5D4→7F4 transitions in Tb3+ was observed at ∼540 nm in powder and thin film samples, and is attributed to non-radiative energy transfer from codoped Ce3+. Luminescence intensities of the films and that of the SiO2:Ce,Tb powder used to make the films are compared.",

author = "Ntwaeaborwa, {O. M.} and Dhlamini, {M. S.} and Harris, {R. A.} and Botha, {J. R.} and Ulrich Buttner and Swart, {H. C.}",

year = "2008",

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doi = "10.1002/pssc.200776807",

language = "English (US)",

volume = "5",

pages = "602--605",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

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T1 - Characterization of sol-gel SiO2:Ce,Tb powder and pulsed laser deposited thin film phosphors

AU - Ntwaeaborwa, O. M.

AU - Dhlamini, M. S.

AU - Harris, R. A.

AU - Botha, J. R.

AU - Buttner, Ulrich

AU - Swart, H. C.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Thin films of SiO2:Ce,Tb (Ce = Tb = 0.5 mol%) nanoparticulate phosphor (nanophosphor) were ablated on Si (100) substrates using either the conventional pulsed laser deposition (PLD) or pulsed reactive crossed beam laser ablation (PRCLA) technique. Morphology and surface topography of the films were analysed with scanning electron microscopy (SEM) and atomic force microscopy (AFM) respectively. The chemical composition and thicknesses of the films were determined by Rutherford backscattering spectroscopy (RBS). Luminescence properties of the films were studied with cathodoluminescence (CL) spectroscopy and a 325 nm HeCd laser. Enhanced green cathodoluminescence and photoluminescence (PL) associated with 5D4→7F4 transitions in Tb3+ was observed at ∼540 nm in powder and thin film samples, and is attributed to non-radiative energy transfer from codoped Ce3+. Luminescence intensities of the films and that of the SiO2:Ce,Tb powder used to make the films are compared.

AB - Thin films of SiO2:Ce,Tb (Ce = Tb = 0.5 mol%) nanoparticulate phosphor (nanophosphor) were ablated on Si (100) substrates using either the conventional pulsed laser deposition (PLD) or pulsed reactive crossed beam laser ablation (PRCLA) technique. Morphology and surface topography of the films were analysed with scanning electron microscopy (SEM) and atomic force microscopy (AFM) respectively. The chemical composition and thicknesses of the films were determined by Rutherford backscattering spectroscopy (RBS). Luminescence properties of the films were studied with cathodoluminescence (CL) spectroscopy and a 325 nm HeCd laser. Enhanced green cathodoluminescence and photoluminescence (PL) associated with 5D4→7F4 transitions in Tb3+ was observed at ∼540 nm in powder and thin film samples, and is attributed to non-radiative energy transfer from codoped Ce3+. Luminescence intensities of the films and that of the SiO2:Ce,Tb powder used to make the films are compared.

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M3 - Conference article

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Y2 - 28 May 2007 through 1 June 2007

ER -

Characterization of sol-gel SiO₂:Ce,Tb powder and pulsed laser deposited thin film phosphors

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