Characterization of ultrathin strained-Si channel layers of n-MOSFETs using transmission electron microscopy

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Channel Layer 100%
• Transmissions 100%
• Mobility Enhancement 50%
• Defects 50%
• Ion Implantation 50%
• Field-Effect Transistor 25%
• Metal Oxide Semiconductor 25%
• Heat Treatment 25%
• Subthreshold Slope 25%
• Stress Condition 25%
• Rapid Thermal Annealing 25%
• Convergent Beam Electron Diffraction 25%
• Strain 25%
• Lattice Constant 25%
• Carrier Mobility 25%

Material Science

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Transmission Electron Microscopy 100%
• Ion Implantation 66%
• Metal Oxide 33%
• Annealing 33%
• Lattice Constant 33%
• Carrier Transport 33%
• Carrier Mobility 33%
• Oxide Semiconductor 33%
• Field Effect Transistors 33%
• Density 33%
• Convergent Beam Electron Diffraction 33%
• Electron Mobility 33%

Keyphrases

• Strained Channel 14%
• Carriers Mobility Enhancement 14%
• Subthreshold Region 14%
• Self-implantation 14%