Characterizations of low-temperature electroluminescence from n-ZnO Nanowire/ p-GaN light emitting diodes

Tzu Chun Lu; Min Yung Ke; Sheng Chieh Yang; Yun Wei Cheng; Liang Yi Chen; Guan Jhong Lin; Yu Hsin Lu; H. He; Hao Chung Kuo; JianJang Huang

Characterizations of low-temperature electroluminescence from n-ZnO Nanowire/ p-GaN light emitting diodes

Tzu Chun Lu, Min Yung Ke, Sheng Chieh Yang, Yun Wei Cheng, Liang Yi Chen, Guan Jhong Lin, Yu Hsin Lu, H. He, Hao Chung Kuo, JianJang Huang^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Low temperature electroluminescence (EL) from a ZnO nanowire light emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p- GaN, high purity UV (ultra-violet) light emission at wavelength 398nm was obtained. As the temperature is decreased, contrary to the typical GaN based light emitting didoes (LEDs), our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen of MgO defects.

Original language	English (US)
Title of host publication	2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011
State	Published - 2011
Externally published	Yes
Event	2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011 - Palm Springs, CA, United States Duration: May 16 2011 → May 19 2011

Other

Other	2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011
Country/Territory	United States
City	Palm Springs, CA
Period	05/16/11 → 05/19/11

Keywords

Low-temperature electroluminescence
UV LED
ZnO nanowire

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Cite this

@inproceedings{ca807f54a72046e3b5eeb2cf4aa8e245,

title = "Characterizations of low-temperature electroluminescence from n-ZnO Nanowire/ p-GaN light emitting diodes",

abstract = "Low temperature electroluminescence (EL) from a ZnO nanowire light emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p- GaN, high purity UV (ultra-violet) light emission at wavelength 398nm was obtained. As the temperature is decreased, contrary to the typical GaN based light emitting didoes (LEDs), our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen of MgO defects.",

keywords = "Low-temperature electroluminescence, UV LED, ZnO nanowire",

author = "Lu, {Tzu Chun} and Ke, {Min Yung} and Yang, {Sheng Chieh} and Cheng, {Yun Wei} and Chen, {Liang Yi} and Lin, {Guan Jhong} and Lu, {Yu Hsin} and H. He and Kuo, {Hao Chung} and JianJang Huang",

year = "2011",

language = "English (US)",

isbn = "1893580172",

booktitle = "2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011",

note = "2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011 ; Conference date: 16-05-2011 Through 19-05-2011",

}

Lu, TC, Ke, MY, Yang, SC, Cheng, YW, Chen, LY, Lin, GJ, Lu, YH, He, H, Kuo, HC & Huang, J 2011, Characterizations of low-temperature electroluminescence from n-ZnO Nanowire/ p-GaN light emitting diodes. in 2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011. 2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011, Palm Springs, CA, United States, 05/16/11.

Characterizations of low-temperature electroluminescence from n-ZnO Nanowire/ p-GaN light emitting diodes. / Lu, Tzu Chun; Ke, Min Yung; Yang, Sheng Chieh et al.
2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011. 2011.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Characterizations of low-temperature electroluminescence from n-ZnO Nanowire/ p-GaN light emitting diodes

AU - Lu, Tzu Chun

AU - Ke, Min Yung

AU - Yang, Sheng Chieh

AU - Cheng, Yun Wei

AU - Chen, Liang Yi

AU - Lin, Guan Jhong

AU - Lu, Yu Hsin

AU - He, H.

AU - Kuo, Hao Chung

AU - Huang, JianJang

PY - 2011

Y1 - 2011

N2 - Low temperature electroluminescence (EL) from a ZnO nanowire light emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p- GaN, high purity UV (ultra-violet) light emission at wavelength 398nm was obtained. As the temperature is decreased, contrary to the typical GaN based light emitting didoes (LEDs), our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen of MgO defects.

AB - Low temperature electroluminescence (EL) from a ZnO nanowire light emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p- GaN, high purity UV (ultra-violet) light emission at wavelength 398nm was obtained. As the temperature is decreased, contrary to the typical GaN based light emitting didoes (LEDs), our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen of MgO defects.

KW - Low-temperature electroluminescence

KW - UV LED

KW - ZnO nanowire

UR - http://www.scopus.com/inward/record.url?scp=84887390757&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84887390757

SN - 1893580172

SN - 9781893580176

BT - 2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011

T2 - 2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011

Y2 - 16 May 2011 through 19 May 2011

ER -

Characterizations of low-temperature electroluminescence from n-ZnO Nanowire/ p-GaN light emitting diodes

Abstract

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Keywords

ASJC Scopus subject areas

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