Abstract
Most single-wall carbon nanotube field-effect transistors show significant hysteresis in their transfer characteristics between forward and reverse gate bias sweeps. It was proposed that the hysteresis is due to a dynamic charging process at the carbon nanotube-dielectric interface. We have studied the charge injection and subsequent discharging processes at the carbon nanotube- SiO2 interface using electrostatic force microscopy. It was observed that the water layer assists charge diffusion on the dielectric surface.
Original language | English (US) |
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Article number | 093509 |
Journal | Applied Physics Letters |
Volume | 93 |
Issue number | 9 |
DOIs | |
State | Published - 2008 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)