Charge injection at carbon nanotube- SiO2 interface

Hock Guan Ong, Jun Wei Cheah, Lang Chen, Hosea Tangtang, Yanping Xu, Bing Li, Hua Zhang, Lain Jong Li, Junling Wang

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


Most single-wall carbon nanotube field-effect transistors show significant hysteresis in their transfer characteristics between forward and reverse gate bias sweeps. It was proposed that the hysteresis is due to a dynamic charging process at the carbon nanotube-dielectric interface. We have studied the charge injection and subsequent discharging processes at the carbon nanotube- SiO2 interface using electrostatic force microscopy. It was observed that the water layer assists charge diffusion on the dielectric surface.

Original languageEnglish (US)
Article number093509
JournalApplied Physics Letters
Issue number9
StatePublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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