Most single-wall carbon nanotube field-effect transistors show significant hysteresis in their transfer characteristics between forward and reverse gate bias sweeps. It was proposed that the hysteresis is due to a dynamic charging process at the carbon nanotube-dielectric interface. We have studied the charge injection and subsequent discharging processes at the carbon nanotube- SiO2 interface using electrostatic force microscopy. It was observed that the water layer assists charge diffusion on the dielectric surface.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - 2008|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)