Charge transfer of n-type GaN photoelectrolysis in HCl solution for H 2 gas generation at a counterelectrode

Katsushi Fujii; Masato Ono; Takashi Ito; Kazuhiro Ohkawa

Charge transfer of n-type GaN photoelectrolysis in HCl solution for H ₂ gas generation at a counterelectrode

Katsushi Fujii^*, Masato Ono, Takashi Ito, Kazuhiro Ohkawa

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

In order to clarify the charge transfer characteristics for H₂ generation, photoelectrochemical properties of n-type GaN in HCl solution were investigated. The fiatband potential under illumination and the onset voltages of photocurrent located approximately the same position. From the result, we concluded that the positively charged surface by hole capture is the main reason of the extra voltage requirement for H₂ generation. The carrier concentration in n-type GaN also affects the photocurrent.

Original language	English (US)
Pages (from-to)	279-284
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	885
State	Published - 2006
Externally published	Yes
Event	2005 MRS Fall Meeting - Boston, MA, United States Duration: Nov 28 2005 → Dec 1 2005

ASJC Scopus subject areas

Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
General Materials Science

Cite this

@article{c299ffaa88544b61b7b145d3b6776f4f,

title = "Charge transfer of n-type GaN photoelectrolysis in HCl solution for H 2 gas generation at a counterelectrode",

abstract = "In order to clarify the charge transfer characteristics for H2 generation, photoelectrochemical properties of n-type GaN in HCl solution were investigated. The fiatband potential under illumination and the onset voltages of photocurrent located approximately the same position. From the result, we concluded that the positively charged surface by hole capture is the main reason of the extra voltage requirement for H2 generation. The carrier concentration in n-type GaN also affects the photocurrent.",

author = "Katsushi Fujii and Masato Ono and Takashi Ito and Kazuhiro Ohkawa",

year = "2006",

language = "English (US)",

volume = "885",

pages = "279--284",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "2005 MRS Fall Meeting ; Conference date: 28-11-2005 Through 01-12-2005",

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TY - JOUR

T1 - Charge transfer of n-type GaN photoelectrolysis in HCl solution for H 2 gas generation at a counterelectrode

AU - Fujii, Katsushi

AU - Ono, Masato

AU - Ito, Takashi

AU - Ohkawa, Kazuhiro

PY - 2006

Y1 - 2006

N2 - In order to clarify the charge transfer characteristics for H2 generation, photoelectrochemical properties of n-type GaN in HCl solution were investigated. The fiatband potential under illumination and the onset voltages of photocurrent located approximately the same position. From the result, we concluded that the positively charged surface by hole capture is the main reason of the extra voltage requirement for H2 generation. The carrier concentration in n-type GaN also affects the photocurrent.

AB - In order to clarify the charge transfer characteristics for H2 generation, photoelectrochemical properties of n-type GaN in HCl solution were investigated. The fiatband potential under illumination and the onset voltages of photocurrent located approximately the same position. From the result, we concluded that the positively charged surface by hole capture is the main reason of the extra voltage requirement for H2 generation. The carrier concentration in n-type GaN also affects the photocurrent.

UR - http://www.scopus.com/inward/record.url?scp=33747376963&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33747376963

SN - 0272-9172

VL - 885

SP - 279

EP - 284

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - 2005 MRS Fall Meeting

Y2 - 28 November 2005 through 1 December 2005

ER -

Charge transfer of n-type GaN photoelectrolysis in HCl solution for H ₂ gas generation at a counterelectrode

Abstract

ASJC Scopus subject areas

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