TY - JOUR
T1 - Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant
AU - Matsuoka, Hirofumi
AU - Kanahashi, Kaito
AU - Tanaka, Naoki
AU - Shoji, Yoshiaki
AU - Li, Lain-Jong
AU - Pu, Jiang
AU - Ito, Hiroshi
AU - Ohta, Hiromichi
AU - Fukushima, Takanori
AU - Takenobu, Taishi
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: T.T. was partially supported by Grants-in-Aid from MEXT (JP26102012 "π-System Figuration", JP17H01069, JP16K13618, JP15K21721, and JP25000003). K.K. and J.P. acknowledge the Leading Graduate Program in Science and Engineering, Waseda University from the Ministry of Education, Culture, Sports, Science and Technology (MEST) of Japan. T.F. was supported by Grant-in-Aid for Scientific Research on Innovative Areas (JP26102008 "π-System Figuration") and "Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials" from MEXT. Y.S. was supported by the Asahi Glass Foundation. This work was also supported in part by the Network Joint Research Center for Materials and Devices.
PY - 2018/1/18
Y1 - 2018/1/18
N2 - Hole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.
AB - Hole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.
UR - http://hdl.handle.net/10754/627245
UR - http://iopscience.iop.org/article/10.7567/JJAP.57.02CB15/meta
UR - http://www.scopus.com/inward/record.url?scp=85040942242&partnerID=8YFLogxK
U2 - 10.7567/jjap.57.02cb15
DO - 10.7567/jjap.57.02cb15
M3 - Article
SN - 0021-4922
VL - 57
SP - 02CB15
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 2S2
ER -