TY - JOUR
T1 - Chemical vapor deposition-grown nitrogen-doped graphene’s synthesis, characterization and applications
AU - Deokar, Geetanjali
AU - Jin, Junjie
AU - Schwingenschlögl, Udo
AU - Costa, Pedro M.F.J.
N1 - Funding Information:
This work was supported by KAUST (REI/1/4258-01-01). We are thankful to KAUST editing services for their contribution to technical English-language editing. The figure in Fig. , Fig. , and Fig. were illustrated by Xavier Pita, a scientific illustrator at KAUST.
Publisher Copyright:
© 2022, The Author(s).
PY - 2022/12
Y1 - 2022/12
N2 - The physical properties of carbon materials can be altered by doping. For instance, the electronic properties of graphene can be modulated by controlling the substitutional doping of the carbon lattice with N. In addition, C–N bonding configurations with three ring types are recognized: pyridinic-N, pyrrolic-N, and graphitic-N. Controlling the type and relative density of various types of substitutional N is an important objective that requires an extremely high level of precision when the atomic lattice is constructed. This control can be accomplished only via bottom-up methods, such as chemical vapor deposition (CVD). The number of reports on N-doped graphene (NDG) grown via CVD has increased over the past decade, but a reliable wafer-scale production strategy that can realize the desired atomic-precision growth of NDG is still lacking. To identify the most promising strategies and analyze the consistency of the results published in the literature, we review the CVD growth and characterization of two-dimensional NDG and two of the most popular applications of NDG films: field-effect transistors and energy storage devices.
AB - The physical properties of carbon materials can be altered by doping. For instance, the electronic properties of graphene can be modulated by controlling the substitutional doping of the carbon lattice with N. In addition, C–N bonding configurations with three ring types are recognized: pyridinic-N, pyrrolic-N, and graphitic-N. Controlling the type and relative density of various types of substitutional N is an important objective that requires an extremely high level of precision when the atomic lattice is constructed. This control can be accomplished only via bottom-up methods, such as chemical vapor deposition (CVD). The number of reports on N-doped graphene (NDG) grown via CVD has increased over the past decade, but a reliable wafer-scale production strategy that can realize the desired atomic-precision growth of NDG is still lacking. To identify the most promising strategies and analyze the consistency of the results published in the literature, we review the CVD growth and characterization of two-dimensional NDG and two of the most popular applications of NDG films: field-effect transistors and energy storage devices.
UR - http://www.scopus.com/inward/record.url?scp=85126090467&partnerID=8YFLogxK
U2 - 10.1038/s41699-022-00287-8
DO - 10.1038/s41699-022-00287-8
M3 - Review article
AN - SCOPUS:85126090467
SN - 2397-7132
VL - 6
JO - npj 2D Materials and Applications
JF - npj 2D Materials and Applications
IS - 1
M1 - 14
ER -