Chemically stabilized epitaxial wurtzite-BN thin film

Badri Vishal; Rajendra Singh; Abhishek Chaturvedi; Ankit Sharma; M. B. Sreedhara; Rajib Sahu; Usha Bhat; Upadrasta Ramamurty; Ranjan Datta

doi:10.1016/j.spmi.2018.01.027

Chemically stabilized epitaxial wurtzite-BN thin film

Badri Vishal, Rajendra Singh, Abhishek Chaturvedi, Ankit Sharma, M. B. Sreedhara, Rajib Sahu, Usha Bhat, Upadrasta Ramamurty, Ranjan Datta^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We report on the chemically stabilized epitaxial w-BN thin film grown on c-plane sapphire by pulsed laser deposition under slow kinetic condition. Traces of no other allotropes such as cubic (c) or hexagonal (h) BN phases are present. Sapphire substrate plays a significant role in stabilizing the metastable w-BN from h-BN target under unusual PLD growth condition involving low temperature and pressure and is explained based on density functional theory calculation. The hardness and the elastic modulus of the w-BN film are 37 & 339 GPa, respectively measured by indentation along <0001> direction. The results are extremely promising in advancing the microelectronic and mechanical tooling industry.

Original language	English (US)
Pages (from-to)	197-203
Number of pages	7
Journal	Superlattices and Microstructures
Volume	115
DOIs	https://doi.org/10.1016/j.spmi.2018.01.027
State	Published - Mar 2018

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Chemically stabilized epitaxial wurtzite-BN thin film",

abstract = "We report on the chemically stabilized epitaxial w-BN thin film grown on c-plane sapphire by pulsed laser deposition under slow kinetic condition. Traces of no other allotropes such as cubic (c) or hexagonal (h) BN phases are present. Sapphire substrate plays a significant role in stabilizing the metastable w-BN from h-BN target under unusual PLD growth condition involving low temperature and pressure and is explained based on density functional theory calculation. The hardness and the elastic modulus of the w-BN film are 37 & 339 GPa, respectively measured by indentation along <0001> direction. The results are extremely promising in advancing the microelectronic and mechanical tooling industry.",

author = "Badri Vishal and Rajendra Singh and Abhishek Chaturvedi and Ankit Sharma and Sreedhara, {M. B.} and Rajib Sahu and Usha Bhat and Upadrasta Ramamurty and Ranjan Datta",

note = "Funding Information: The authors at JNCASR sincerely acknowledge ICMS for funding. Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd",

year = "2018",

month = mar,

doi = "10.1016/j.spmi.2018.01.027",

language = "English (US)",

volume = "115",

pages = "197--203",

journal = "Superlattices and Microstructures",

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TY - JOUR

T1 - Chemically stabilized epitaxial wurtzite-BN thin film

AU - Vishal, Badri

AU - Singh, Rajendra

AU - Chaturvedi, Abhishek

AU - Sharma, Ankit

AU - Sreedhara, M. B.

AU - Sahu, Rajib

AU - Bhat, Usha

AU - Ramamurty, Upadrasta

AU - Datta, Ranjan

PY - 2018/3

Y1 - 2018/3

N2 - We report on the chemically stabilized epitaxial w-BN thin film grown on c-plane sapphire by pulsed laser deposition under slow kinetic condition. Traces of no other allotropes such as cubic (c) or hexagonal (h) BN phases are present. Sapphire substrate plays a significant role in stabilizing the metastable w-BN from h-BN target under unusual PLD growth condition involving low temperature and pressure and is explained based on density functional theory calculation. The hardness and the elastic modulus of the w-BN film are 37 & 339 GPa, respectively measured by indentation along <0001> direction. The results are extremely promising in advancing the microelectronic and mechanical tooling industry.

AB - We report on the chemically stabilized epitaxial w-BN thin film grown on c-plane sapphire by pulsed laser deposition under slow kinetic condition. Traces of no other allotropes such as cubic (c) or hexagonal (h) BN phases are present. Sapphire substrate plays a significant role in stabilizing the metastable w-BN from h-BN target under unusual PLD growth condition involving low temperature and pressure and is explained based on density functional theory calculation. The hardness and the elastic modulus of the w-BN film are 37 & 339 GPa, respectively measured by indentation along <0001> direction. The results are extremely promising in advancing the microelectronic and mechanical tooling industry.

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U2 - 10.1016/j.spmi.2018.01.027

DO - 10.1016/j.spmi.2018.01.027

M3 - Article

AN - SCOPUS:85041541506

SN - 0749-6036

VL - 115

SP - 197

EP - 203

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

Chemically stabilized epitaxial wurtzite-BN thin film

Abstract

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