Chemically stabilized epitaxial wurtzite-BN thin film

Badri Vishal, Rajendra Singh, Abhishek Chaturvedi, Ankit Sharma, M. B. Sreedhara, Rajib Sahu, Usha Bhat, Upadrasta Ramamurty, Ranjan Datta*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


We report on the chemically stabilized epitaxial w-BN thin film grown on c-plane sapphire by pulsed laser deposition under slow kinetic condition. Traces of no other allotropes such as cubic (c) or hexagonal (h) BN phases are present. Sapphire substrate plays a significant role in stabilizing the metastable w-BN from h-BN target under unusual PLD growth condition involving low temperature and pressure and is explained based on density functional theory calculation. The hardness and the elastic modulus of the w-BN film are 37 & 339 GPa, respectively measured by indentation along <0001> direction. The results are extremely promising in advancing the microelectronic and mechanical tooling industry.

Original languageEnglish (US)
Pages (from-to)197-203
Number of pages7
JournalSuperlattices and Microstructures
StatePublished - Mar 2018

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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