TY - CHAP
T1 - Cleaning Challenges of High-κ/Metal Gate Structures
AU - Hussain, Muhammad Mustafa
AU - Shamiryan, Denis G.
AU - Paraschiv, Vasile
AU - Sano, Kenichi
AU - Reinhardt, Karen A.
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2011/2/22
Y1 - 2011/2/22
N2 - High-κ/metal gates are used as transistors for advanced logic applications to improve speed and eliminate electrical issues associated with polySi and SiO2 gates. Various integration schemes are possible and will be discussed, such as dual gate, gate-first, and gate-last, both of which require specialized cleaning and etching steps. Specific areas of discussion will include cleaning and conditioning of the silicon surface, forming a high-quality chemical oxide, removal of the high-κ dielectric with selectivity to the SiO2 layer, cleaning and residue removal after etching, and prevention of galvanic corrosion during cleaning. © 2011 Scrivener Publishing LLC. All rights reserved.
AB - High-κ/metal gates are used as transistors for advanced logic applications to improve speed and eliminate electrical issues associated with polySi and SiO2 gates. Various integration schemes are possible and will be discussed, such as dual gate, gate-first, and gate-last, both of which require specialized cleaning and etching steps. Specific areas of discussion will include cleaning and conditioning of the silicon surface, forming a high-quality chemical oxide, removal of the high-κ dielectric with selectivity to the SiO2 layer, cleaning and residue removal after etching, and prevention of galvanic corrosion during cleaning. © 2011 Scrivener Publishing LLC. All rights reserved.
UR - http://hdl.handle.net/10754/575837
UR - http://doi.wiley.com/10.1002/9781118071748.ch7
UR - http://www.scopus.com/inward/record.url?scp=84886034909&partnerID=8YFLogxK
U2 - 10.1002/9781118071748.ch7
DO - 10.1002/9781118071748.ch7
M3 - Chapter
SN - 9780470625958
SP - 237
EP - 284
BT - Handbook of Cleaning in Semiconductor Manufacturing
PB - Wiley
ER -