CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)

Mohamed T. Ghoneim; Jhonathan Prieto Rojas; Arwa T. Kutbee; Amir Hanna; Muhammad Mustafa Hussain

doi:10.1109/ICECE.2014.7026822

CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)

Mohamed T. Ghoneim, Jhonathan Prieto Rojas, Arwa T. Kutbee, Amir Hanna, Muhammad Mustafa Hussain

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

Today's mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.

Original language	English (US)
Title of host publication	8th International Conference on Electrical and Computer Engineering
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	655-658
Number of pages	4
ISBN (Print)	9781479941667
DOIs	https://doi.org/10.1109/ICECE.2014.7026822
State	Published - Dec 2014

Access to Document

10.1109/ICECE.2014.7026822

Cite this

@inproceedings{8b2bfd88b69048e48a86fcf1df7c03e5,

title = "CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)",

abstract = "Today's mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.",

author = "Ghoneim, {Mohamed T.} and Rojas, {Jhonathan Prieto} and Kutbee, {Arwa T.} and Amir Hanna and Hussain, {Muhammad Mustafa}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2014",

month = dec,

doi = "10.1109/ICECE.2014.7026822",

language = "English (US)",

isbn = "9781479941667",

pages = "655--658",

booktitle = "8th International Conference on Electrical and Computer Engineering",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

}

CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100). / Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Kutbee, Arwa T. et al.
8th International Conference on Electrical and Computer Engineering. Institute of Electrical and Electronics Engineers (IEEE), 2014. p. 655-658.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)

AU - Ghoneim, Mohamed T.

AU - Rojas, Jhonathan Prieto

AU - Kutbee, Arwa T.

AU - Hanna, Amir

AU - Hussain, Muhammad Mustafa

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2014/12

Y1 - 2014/12

N2 - Today's mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.

AB - Today's mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.

UR - http://hdl.handle.net/10754/565010

UR - http://ieeexplore.ieee.org/document/7026822/

UR - http://www.scopus.com/inward/record.url?scp=84923233718&partnerID=8YFLogxK

U2 - 10.1109/ICECE.2014.7026822

DO - 10.1109/ICECE.2014.7026822

M3 - Conference contribution

SN - 9781479941667

SP - 655

EP - 658

BT - 8th International Conference on Electrical and Computer Engineering

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)

Abstract

Access to Document

Other files and links

Fingerprint

Cite this