@inproceedings{515b41b04f1045129b677dd4f163f992,
title = "CMOS diodes operating beyond avalanche frequency",
abstract = "This paper describes IMPATT diodes designed and fabricated in 0.25m CMOS technology to operate beyond avalanche frequency. IMPATT Impedance measurements from 40MHz to 110GHz confirmed avalanche frequency range from 30GHz to 55GHz and negative resistance tuning range from 30GHz to 80GHz. G&H model is verified and the impact of different device parameters are presented",
keywords = "Avalanche Frequency, CMOS, CPW, GSG, IMPATT",
author = "Talal Al-Attar",
year = "2011",
doi = "10.1109/ISQED.2011.5770746",
language = "English (US)",
isbn = "9781612849140",
series = "Proceedings of the 12th International Symposium on Quality Electronic Design, ISQED 2011",
pages = "332--337",
booktitle = "Proceedings of the 12th International Symposium on Quality Electronic Design, ISQED 2011",
note = "12th International Symposium on Quality Electronic Design, ISQED 2011 ; Conference date: 14-03-2011 Through 16-03-2011",
}