CMOS-RC Colpitts Oscillator Design Using Floating Fractional-Order Inductance Simulator

Aslihan Kartci, Norbert Herencsar, Lu bomir Brancik, Khaled N. Salama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations


This paper deals with CMOS fractional-order inductance (FoL) simulator design and its utilization in 2.75 th order Colpitts oscillator providing high frequency of oscillation. The proposed floating FoL is composed of two unity-gain current followers (CF±s), two inverting voltage buffers, a transconductor, and a fractional-order capacitor (FoC) of order 0.75, while the input intrinsic resistance of CF± is used as design parameter instead of passive resistor. The resulting equivalent inductance value of the FoL can be adjusted via order of FoC, which was emulated via 5 th -order Foster II RC network and values optimized using modified least squares quadratic method. In frequency range 138 kHz - 2.45 MHz the L y shows ±5 degree phase angle deviation. Theoretical results are verified by SPICE simulations using TSMC 0.18 μm level-7 LO EPI SCN018 CMOS process parameters with ±1 V supply voltages.
Original languageEnglish (US)
Title of host publication2018 IEEE 61st International Midwest Symposium on Circuits and Systems (MWSCAS)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Print)9781538673928
StatePublished - Feb 28 2019


Dive into the research topics of 'CMOS-RC Colpitts Oscillator Design Using Floating Fractional-Order Inductance Simulator'. Together they form a unique fingerprint.

Cite this