We present the first fabrication of electronic synapses using two dimensional (2D) hexagonal boron nitride (/j-BN) as active switching layer. The main advantage of these devices compared to the transition metal oxide (TMO) based counterparts is that multilayer h-BN stacks show both volatile and non-volatile resistive switching (RS) depending on the programming stresses applied, which allows implementing short-term (STP) and long-term plasticity (LTP) rules using a single device and without the need of complex architectures.
|Original language||English (US)|
|Title of host publication||Technical Digest - International Electron Devices Meeting, IEDM|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||1|
|State||Published - Jan 23 2018|