TY - JOUR
T1 - Colossal Tunneling Electroresistance in Co-Planar Polymer Ferroelectric Tunnel Junctions
AU - Kumar, Manasvi
AU - Georgiadou, Dimitra G.
AU - Seitkhan, Akmaral
AU - Loganathan, Kalaivanan
AU - Yengel, Emre
AU - Faber, Hendrik
AU - Naphade, Dipti
AU - Basu, Aniruddha
AU - Anthopoulos, Thomas D.
AU - Asadi, Kamal
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: M.K. and K.A. acknowledge the financial support of the Max-Planck Institute for Polymer Research and Alexander von Humboldt Foundation (Germany) through the Sofja Kovalevskaja Award, the technical support from H.J. Gutmann. A.S., K.L., E.Y., H.F., D.D., A.B., and T.D.A. acknowledge the King Abdullah University of Science and Technology (KAUST) for financial support. The authors thank Prof. P. W.M. Blom for fruitful discussion
PY - 2019/12/19
Y1 - 2019/12/19
N2 - Ferroelectric tunnel junctions (FTJs) are ideal resistance-switching devices due to their deterministic behavior and operation at low voltages. However, FTJs have remained mostly as a scientific curiosity due to three critical issues: lack of rectification in their current-voltage characteristic, small tunneling electroresistance (TER) effect, and absence of a straightforward lithography-based device fabrication method that would allow for their mass production. Co-planar FTJs that are fabricated using wafer-scale adhesion lithography technique are demonstrated, and a bi-stable rectifying behavior with colossal TER approaching 106% at room temperature is exhibited. The FTJs are based on poly(vinylidenefluoride-co-trifluoroethylene) [P(VDF-TrFE)], and employ asymmetric co-planar metallic electrodes separated by
AB - Ferroelectric tunnel junctions (FTJs) are ideal resistance-switching devices due to their deterministic behavior and operation at low voltages. However, FTJs have remained mostly as a scientific curiosity due to three critical issues: lack of rectification in their current-voltage characteristic, small tunneling electroresistance (TER) effect, and absence of a straightforward lithography-based device fabrication method that would allow for their mass production. Co-planar FTJs that are fabricated using wafer-scale adhesion lithography technique are demonstrated, and a bi-stable rectifying behavior with colossal TER approaching 106% at room temperature is exhibited. The FTJs are based on poly(vinylidenefluoride-co-trifluoroethylene) [P(VDF-TrFE)], and employ asymmetric co-planar metallic electrodes separated by
UR - http://hdl.handle.net/10754/660920
UR - https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.201901091
UR - http://www.scopus.com/inward/record.url?scp=85076747994&partnerID=8YFLogxK
U2 - 10.1002/aelm.201901091
DO - 10.1002/aelm.201901091
M3 - Article
SN - 2199-160X
SP - 1901091
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
ER -