Laser doping of crystalline silicon has been the subject of intense research over the past decade, due to its potential to enable the fabrication of high efficiency and low-cost crystalline silicon solar cells. Information regarding the doping profile created by the process is critical for process optimisation, however is generally difficult to obtain. In this paper, a relatively new technique for characterising laser doping cross-sections - Secondary Electron Microscopy Dopant Contrast Image (SEMDCI) - is compared with the widely used Electron Beam Induced Current (EBIC) method. A good agreement between the two techniques regarding the p-n junction profile is demonstrated. The differences between the methods are attributed to the difference of the sensitivity. The comparison demonstrates the reliability and usefulness of the SEMDCI as a characterisation method for laser doping, which shows both the p-n junction outline and dopant distribution within the doped regions. The differences between the methods and the challenges associated with the application of the SEMDCI method are also discussed.
|Original language||English (US)|
|Number of pages||7|
|State||Published - Jan 1 2014|
|Event||4th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2014 - Hertogenbosch, Netherlands|
Duration: Mar 25 2014 → Mar 27 2014
- Laser doping
ASJC Scopus subject areas