Comparison of optoelectrical characteristics between Schottky and Ohmic contacts to $\beta-Ga_{2}O_{3}$ thin film

Zeng Liu, Yusong Zhi, Shan Li, Yuanyuan Liu, Xiao Tang, Zuyong Yan, Peigang Li, Xiaohang Li, Daoyou Guo, Zhenping Wu, Weihua Tang

Research output: Contribution to journalArticlepeer-review

45 Scopus citations


Schottky and Ohmic contacts are key matters affecting carrier transport in oxide semiconductor based electrical and optical devices. For Ga2O3, the comparison of optoelectrical behaviors and the fundamental physical mechanism between these two contacts are not well known yet. In this work, β-Ga2O3 thin films were grown via metal-organic chemical vapor deposition then deposited with symmetrical Ni/Au (Schottky) or Ti/Au (Ohmic) contacts. Optoelectrical measurements show that the Ohmic contacted device exhibits superior responsivities thanks to their higher photocurrents. While for the Schottky contacted device, firstly, it has faster response speed, secondly it exhibits larger photo-to-dark current ratios owing to their low dark current. Specifically, the voltage- and light intensity-dependent responsivity and detectivities of the Schottky and Ohmic contacted devices were measured and discussed under the consideration of different voltages and UV light intensities.
Original languageEnglish (US)
Pages (from-to)085105
JournalJournal of Physics D: Applied Physics
Issue number8
StatePublished - Dec 13 2019


Dive into the research topics of 'Comparison of optoelectrical characteristics between Schottky and Ohmic contacts to $\beta-Ga_{2}O_{3}$ thin film'. Together they form a unique fingerprint.

Cite this