TY - JOUR
T1 - Comparison of optoelectrical characteristics between Schottky and Ohmic contacts to $\beta-Ga_{2}O_{3}$ thin film
AU - Liu, Zeng
AU - Zhi, Yusong
AU - Li, Shan
AU - Liu, Yuanyuan
AU - Tang, Xiao
AU - Yan, Zuyong
AU - Li, Peigang
AU - Li, Xiaohang
AU - Guo, Daoyou
AU - Wu, Zhenping
AU - Tang, Weihua
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the National Natural Science Foundation of China (Grant Nos.61774019, 51572033, and 51572241), the Beijing Municipal Commission of Science and Technology, China (Grant No. SX2018-04). In addition, the authors acknowledged the Fundamental
Research Funds for the Central Universities and the Foundation of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts andTelecommunications).
PY - 2019/12/13
Y1 - 2019/12/13
N2 - Schottky and Ohmic contacts are key matters affecting carrier transport in oxide semiconductor based electrical and optical devices. For Ga2O3, the comparison of optoelectrical behaviors and the fundamental physical mechanism between these two contacts are not well known yet. In this work, β-Ga2O3 thin films were grown via metal-organic chemical vapor deposition then deposited with symmetrical Ni/Au (Schottky) or Ti/Au (Ohmic) contacts. Optoelectrical measurements show that the Ohmic contacted device exhibits superior responsivities thanks to their higher photocurrents. While for the Schottky contacted device, firstly, it has faster response speed, secondly it exhibits larger photo-to-dark current ratios owing to their low dark current. Specifically, the voltage- and light intensity-dependent responsivity and detectivities of the Schottky and Ohmic contacted devices were measured and discussed under the consideration of different voltages and UV light intensities.
AB - Schottky and Ohmic contacts are key matters affecting carrier transport in oxide semiconductor based electrical and optical devices. For Ga2O3, the comparison of optoelectrical behaviors and the fundamental physical mechanism between these two contacts are not well known yet. In this work, β-Ga2O3 thin films were grown via metal-organic chemical vapor deposition then deposited with symmetrical Ni/Au (Schottky) or Ti/Au (Ohmic) contacts. Optoelectrical measurements show that the Ohmic contacted device exhibits superior responsivities thanks to their higher photocurrents. While for the Schottky contacted device, firstly, it has faster response speed, secondly it exhibits larger photo-to-dark current ratios owing to their low dark current. Specifically, the voltage- and light intensity-dependent responsivity and detectivities of the Schottky and Ohmic contacted devices were measured and discussed under the consideration of different voltages and UV light intensities.
UR - http://hdl.handle.net/10754/660429
UR - https://iopscience.iop.org/article/10.1088/1361-6463/ab596f
UR - http://www.scopus.com/inward/record.url?scp=85079521118&partnerID=8YFLogxK
U2 - 10.1088/1361-6463/ab596f
DO - 10.1088/1361-6463/ab596f
M3 - Article
SN - 0022-3727
VL - 53
SP - 085105
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
IS - 8
ER -