Compensated readout for high-density MOS-gated memristor crossbar array

Mohammed A. Zidan, Hesham Omran, Ahmed Sultan Salem, Hossam Aly Hassan Fahmy, Khaled N. Salama

Research output: Contribution to journalArticlepeer-review

25 Scopus citations


Leakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor array.
Original languageEnglish (US)
Pages (from-to)3-6
Number of pages4
JournalIEEE Transactions on Nanotechnology
Issue number1
StatePublished - Jan 2015

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering


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