TY - JOUR
T1 - Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy
AU - Iida, Daisuke
AU - Tamura, Kenta
AU - Iwaya, Motoaki
AU - Kamiyama, Satoshi
AU - Amano, Hiroshi
AU - Akasaki, Isamu
N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21
PY - 2010/10/15
Y1 - 2010/10/15
N2 - The electrical and optical properties of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy were systematically investigated. The photoluminescence spectra of Mg-doped a- and c-plane GaN films exhibit strong emissions related to deep donors when Mg doping concentrations are above 1×1020 cm-3 and 5×1019 cm -3, respectively. The electrical properties also indicate the existence of compensating donors because the hole concentration decreases at such high Mg doping concentrations. In addition, we estimated the N D/NA compensation ratio of a- and c-plane GaN by variable-temperature Hall effect measurement. The obtained results indicate that the compensation effect of the Mg-doped a-plane GaN films is lower than that of the Mg-doped c-plane GaN films. © 2010 Elsevier B.V. All rights reserved.
AB - The electrical and optical properties of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy were systematically investigated. The photoluminescence spectra of Mg-doped a- and c-plane GaN films exhibit strong emissions related to deep donors when Mg doping concentrations are above 1×1020 cm-3 and 5×1019 cm -3, respectively. The electrical properties also indicate the existence of compensating donors because the hole concentration decreases at such high Mg doping concentrations. In addition, we estimated the N D/NA compensation ratio of a- and c-plane GaN by variable-temperature Hall effect measurement. The obtained results indicate that the compensation effect of the Mg-doped a-plane GaN films is lower than that of the Mg-doped c-plane GaN films. © 2010 Elsevier B.V. All rights reserved.
UR - https://linkinghub.elsevier.com/retrieve/pii/S0022024810004896
UR - http://www.scopus.com/inward/record.url?scp=77956879776&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2010.07.038
DO - 10.1016/j.jcrysgro.2010.07.038
M3 - Article
SN - 0022-0248
VL - 312
SP - 3131
EP - 3135
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 21
ER -