Complementary charge trapping and ionic migration in resistive switching of rare-earth manganite TbMnO3

Yimin Cui; Haiyang Peng; Shuxiang Wu; Rongming Wang; Tom Wu

doi:10.1021/am301769f

Complementary charge trapping and ionic migration in resistive switching of rare-earth manganite TbMnO₃

Yimin Cui, Haiyang Peng, Shuxiang Wu, Rongming Wang^*, Tom Wu

^*Corresponding author for this work

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

87 Scopus citations

Abstract

Perovskite rare-earth manganites like TbMnO₃ exhibit rich magnetic and electric phases, providing opportunities for next-generation multifunctional devices. Here, we report the nonvolatile bipolar switching of resistance and capacitance in TbMnO₃ thin films grown on conducting Nb:SrTiO₃ substrates. The device shows an ON/OFF resistance ratio of ∼1 × 10⁴, and the resistive switching is accompanied by a frequency-dependent capacitance switching. Detailed analysis of the conduction mechanisms reveals that the migration of oxygen vacancies and the charge trapping/detrapping at the heterojunction interface play important and complementary roles in the switching behaviors. Our results suggest that both electronic and ionic processes should be considered in order to elucidate the conduction mechanisms and the switching behaviors in such heterostructures made of complex oxides.

Original language	English (US)
Pages (from-to)	1213-1217
Number of pages	5
Journal	ACS Applied Materials and Interfaces
Volume	5
Issue number	4
DOIs	https://doi.org/10.1021/am301769f
State	Published - Feb 27 2013

Keywords

capacitance switching
charge trapping
ionic migration
oxygen vacancies
resistive switching

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1021/am301769f

Cite this

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title = "Complementary charge trapping and ionic migration in resistive switching of rare-earth manganite TbMnO3",

abstract = "Perovskite rare-earth manganites like TbMnO3 exhibit rich magnetic and electric phases, providing opportunities for next-generation multifunctional devices. Here, we report the nonvolatile bipolar switching of resistance and capacitance in TbMnO3 thin films grown on conducting Nb:SrTiO3 substrates. The device shows an ON/OFF resistance ratio of ∼1 × 104, and the resistive switching is accompanied by a frequency-dependent capacitance switching. Detailed analysis of the conduction mechanisms reveals that the migration of oxygen vacancies and the charge trapping/detrapping at the heterojunction interface play important and complementary roles in the switching behaviors. Our results suggest that both electronic and ionic processes should be considered in order to elucidate the conduction mechanisms and the switching behaviors in such heterostructures made of complex oxides.",

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T1 - Complementary charge trapping and ionic migration in resistive switching of rare-earth manganite TbMnO3

AU - Cui, Yimin

AU - Peng, Haiyang

AU - Wu, Shuxiang

AU - Wang, Rongming

AU - Wu, Tom

PY - 2013/2/27

Y1 - 2013/2/27

N2 - Perovskite rare-earth manganites like TbMnO3 exhibit rich magnetic and electric phases, providing opportunities for next-generation multifunctional devices. Here, we report the nonvolatile bipolar switching of resistance and capacitance in TbMnO3 thin films grown on conducting Nb:SrTiO3 substrates. The device shows an ON/OFF resistance ratio of ∼1 × 104, and the resistive switching is accompanied by a frequency-dependent capacitance switching. Detailed analysis of the conduction mechanisms reveals that the migration of oxygen vacancies and the charge trapping/detrapping at the heterojunction interface play important and complementary roles in the switching behaviors. Our results suggest that both electronic and ionic processes should be considered in order to elucidate the conduction mechanisms and the switching behaviors in such heterostructures made of complex oxides.

AB - Perovskite rare-earth manganites like TbMnO3 exhibit rich magnetic and electric phases, providing opportunities for next-generation multifunctional devices. Here, we report the nonvolatile bipolar switching of resistance and capacitance in TbMnO3 thin films grown on conducting Nb:SrTiO3 substrates. The device shows an ON/OFF resistance ratio of ∼1 × 104, and the resistive switching is accompanied by a frequency-dependent capacitance switching. Detailed analysis of the conduction mechanisms reveals that the migration of oxygen vacancies and the charge trapping/detrapping at the heterojunction interface play important and complementary roles in the switching behaviors. Our results suggest that both electronic and ionic processes should be considered in order to elucidate the conduction mechanisms and the switching behaviors in such heterostructures made of complex oxides.

KW - capacitance switching

KW - charge trapping

KW - ionic migration

KW - oxygen vacancies

KW - resistive switching

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