Compound source molecular beam epitaxy for II-VI laser structures

K. Ohkawa; A. Tsujimura; T. Nishikawa; S. Yoshii; T. Yokogawa; M. Kubo; Y. Sasai

doi:10.1016/0022-0248(95)00828-4

Compound source molecular beam epitaxy for II-VI laser structures

K. Ohkawa^*, A. Tsujimura, T. Nishikawa, S. Yoshii, T. Yokogawa, M. Kubo, Y. Sasai

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Compound source molecular beam epitaxy (CSMBE) for II-VI laser structures is developed. This method employs compounds as source materials instead of elements. The surface of ZnSe during CSMBE at 100-350°C is Se-stabilized, in spite of the VI/II ratio of unity. Study of defects observed on ZnCdSe/ZnSSe/ZnMgSSe laser structures indicates that defects are pairs of the stacking faults which form an unique hillock. The composition modulation was not observed for ZnMgSSe layers grown by CSMBE. These results are owing to hot and group-VI diatomic molecular beam generated from compound sources.

Original language	English (US)
Pages (from-to)	632-635
Number of pages	4
Journal	Journal of Crystal Growth
Volume	159
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(95)00828-4
State	Published - Feb 1996
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(95)00828-4

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@article{6a39ccaea052417396bd48141b5663d3,

title = "Compound source molecular beam epitaxy for II-VI laser structures",

abstract = "Compound source molecular beam epitaxy (CSMBE) for II-VI laser structures is developed. This method employs compounds as source materials instead of elements. The surface of ZnSe during CSMBE at 100-350°C is Se-stabilized, in spite of the VI/II ratio of unity. Study of defects observed on ZnCdSe/ZnSSe/ZnMgSSe laser structures indicates that defects are pairs of the stacking faults which form an unique hillock. The composition modulation was not observed for ZnMgSSe layers grown by CSMBE. These results are owing to hot and group-VI diatomic molecular beam generated from compound sources.",

author = "K. Ohkawa and A. Tsujimura and T. Nishikawa and S. Yoshii and T. Yokogawa and M. Kubo and Y. Sasai",

year = "1996",

month = feb,

doi = "10.1016/0022-0248(95)00828-4",

language = "English (US)",

volume = "159",

pages = "632--635",

journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Compound source molecular beam epitaxy for II-VI laser structures

AU - Ohkawa, K.

AU - Tsujimura, A.

AU - Nishikawa, T.

AU - Yoshii, S.

AU - Yokogawa, T.

AU - Kubo, M.

AU - Sasai, Y.

PY - 1996/2

Y1 - 1996/2

N2 - Compound source molecular beam epitaxy (CSMBE) for II-VI laser structures is developed. This method employs compounds as source materials instead of elements. The surface of ZnSe during CSMBE at 100-350°C is Se-stabilized, in spite of the VI/II ratio of unity. Study of defects observed on ZnCdSe/ZnSSe/ZnMgSSe laser structures indicates that defects are pairs of the stacking faults which form an unique hillock. The composition modulation was not observed for ZnMgSSe layers grown by CSMBE. These results are owing to hot and group-VI diatomic molecular beam generated from compound sources.

AB - Compound source molecular beam epitaxy (CSMBE) for II-VI laser structures is developed. This method employs compounds as source materials instead of elements. The surface of ZnSe during CSMBE at 100-350°C is Se-stabilized, in spite of the VI/II ratio of unity. Study of defects observed on ZnCdSe/ZnSSe/ZnMgSSe laser structures indicates that defects are pairs of the stacking faults which form an unique hillock. The composition modulation was not observed for ZnMgSSe layers grown by CSMBE. These results are owing to hot and group-VI diatomic molecular beam generated from compound sources.

UR - http://www.scopus.com/inward/record.url?scp=0030562448&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(95)00828-4

DO - 10.1016/0022-0248(95)00828-4

M3 - Article

AN - SCOPUS:0030562448

SN - 0022-0248

VL - 159

SP - 632

EP - 635

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Compound source molecular beam epitaxy for II-VI laser structures

Abstract

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