Compound-source molecular beam epitaxy for ZnCdSe/ZnSSe/ZnMgSSe laser structure

Kazuhiro Ohkawa; Shigeo Yoshii; Hidemi Takeishi; Ayumu Tsujimura; Shigeo Hayashi; Takeshi Karasawa; Tsuneo Mitsuyu

doi:10.1143/JJAP.33.L1673

Compound-source molecular beam epitaxy for ZnCdSe/ZnSSe/ZnMgSSe laser structure

Kazuhiro Ohkawa, Shigeo Yoshii, Hidemi Takeishi, Ayumu Tsujimura, Shigeo Hayashi, Takeshi Karasawa, Tsuneo Mitsuyu

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We have developed compound-source molecular beam epitaxy (CSMBE) for ZnSe-based laser diodes. The CSMBE technique employs compound sources instead of elemental sources, and can reduces the number of growth parameters. Continuous-wave operation at room temperature of ZnCdSe/ZnSSe/ZnMgSSe laser diodes grown by CSMBE has been demonstrated. The threshold current was 68 mA for a gain-guided device 5 μm wide and 750 μm long.

Original language	English (US)
Pages (from-to)	L1673-L1675
Journal	Japanese Journal of Applied Physics
Volume	33
Issue number	12 A
DOIs	https://doi.org/10.1143/JJAP.33.L1673
State	Published - Dec 1994
Externally published	Yes

Keywords

Compound source
II—VI compounds
MBE
Semiconductor laser
ZnMgSSe

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/JJAP.33.L1673

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title = "Compound-source molecular beam epitaxy for ZnCdSe/ZnSSe/ZnMgSSe laser structure",

abstract = "We have developed compound-source molecular beam epitaxy (CSMBE) for ZnSe-based laser diodes. The CSMBE technique employs compound sources instead of elemental sources, and can reduces the number of growth parameters. Continuous-wave operation at room temperature of ZnCdSe/ZnSSe/ZnMgSSe laser diodes grown by CSMBE has been demonstrated. The threshold current was 68 mA for a gain-guided device 5 μm wide and 750 μm long.",

keywords = "Compound source, II—VI compounds, MBE, Semiconductor laser, ZnMgSSe",

author = "Kazuhiro Ohkawa and Shigeo Yoshii and Hidemi Takeishi and Ayumu Tsujimura and Shigeo Hayashi and Takeshi Karasawa and Tsuneo Mitsuyu",

year = "1994",

month = dec,

doi = "10.1143/JJAP.33.L1673",

language = "English (US)",

volume = "33",

pages = "L1673--L1675",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Compound-source molecular beam epitaxy for ZnCdSe/ZnSSe/ZnMgSSe laser structure

AU - Ohkawa, Kazuhiro

AU - Yoshii, Shigeo

AU - Takeishi, Hidemi

AU - Tsujimura, Ayumu

AU - Hayashi, Shigeo

AU - Karasawa, Takeshi

AU - Mitsuyu, Tsuneo

PY - 1994/12

Y1 - 1994/12

N2 - We have developed compound-source molecular beam epitaxy (CSMBE) for ZnSe-based laser diodes. The CSMBE technique employs compound sources instead of elemental sources, and can reduces the number of growth parameters. Continuous-wave operation at room temperature of ZnCdSe/ZnSSe/ZnMgSSe laser diodes grown by CSMBE has been demonstrated. The threshold current was 68 mA for a gain-guided device 5 μm wide and 750 μm long.

AB - We have developed compound-source molecular beam epitaxy (CSMBE) for ZnSe-based laser diodes. The CSMBE technique employs compound sources instead of elemental sources, and can reduces the number of growth parameters. Continuous-wave operation at room temperature of ZnCdSe/ZnSSe/ZnMgSSe laser diodes grown by CSMBE has been demonstrated. The threshold current was 68 mA for a gain-guided device 5 μm wide and 750 μm long.

KW - Compound source

KW - II—VI compounds

KW - MBE

KW - Semiconductor laser

KW - ZnMgSSe

UR - http://www.scopus.com/inward/record.url?scp=0038986202&partnerID=8YFLogxK

U2 - 10.1143/JJAP.33.L1673

DO - 10.1143/JJAP.33.L1673

M3 - Article

AN - SCOPUS:0038986202

SN - 0021-4922

VL - 33

SP - L1673-L1675

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 12 A

ER -

Compound-source molecular beam epitaxy for ZnCdSe/ZnSSe/ZnMgSSe laser structure

Abstract

Keywords

ASJC Scopus subject areas

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