Compound‐Source MBE for ZnSe‐Based Lasers

K. Ohkawa; H. Takeishi; S. Hayashi; S. Yoshii; A. Tsujimura; T. Karasawa; T. Mitsuyu

doi:10.1002/pssb.2221870205

Compound‐Source MBE for ZnSe‐Based Lasers

K. Ohkawa^*, H. Takeishi, S. Hayashi, S. Yoshii, A. Tsujimura, T. Karasawa, T. Mitsuyu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Compound‐source molecular beam epitaxy (CSMBE) for ZnSe‐based lasers is developed. This method employs compound sources instead of elemental sources. The ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructure is grown by this method. Continuous‐wave operation of the device by CSMBE at room temperature is demonstrated.

Original language	English (US)
Pages (from-to)	291-296
Number of pages	6
Journal	physica status solidi (b)
Volume	187
Issue number	2
DOIs	https://doi.org/10.1002/pssb.2221870205
State	Published - Feb 1 1995
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/pssb.2221870205

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title = "Compound‐Source MBE for ZnSe‐Based Lasers",

abstract = "Compound‐source molecular beam epitaxy (CSMBE) for ZnSe‐based lasers is developed. This method employs compound sources instead of elemental sources. The ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructure is grown by this method. Continuous‐wave operation of the device by CSMBE at room temperature is demonstrated.",

author = "K. Ohkawa and H. Takeishi and S. Hayashi and S. Yoshii and A. Tsujimura and T. Karasawa and T. Mitsuyu",

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AU - Ohkawa, K.

AU - Takeishi, H.

AU - Hayashi, S.

AU - Yoshii, S.

AU - Tsujimura, A.

AU - Karasawa, T.

AU - Mitsuyu, T.

PY - 1995/2/1

Y1 - 1995/2/1

N2 - Compound‐source molecular beam epitaxy (CSMBE) for ZnSe‐based lasers is developed. This method employs compound sources instead of elemental sources. The ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructure is grown by this method. Continuous‐wave operation of the device by CSMBE at room temperature is demonstrated.

AB - Compound‐source molecular beam epitaxy (CSMBE) for ZnSe‐based lasers is developed. This method employs compound sources instead of elemental sources. The ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructure is grown by this method. Continuous‐wave operation of the device by CSMBE at room temperature is demonstrated.

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U2 - 10.1002/pssb.2221870205

DO - 10.1002/pssb.2221870205

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JO - physica status solidi (b)

JF - physica status solidi (b)

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Compound‐Source MBE for ZnSe‐Based Lasers

Abstract

ASJC Scopus subject areas

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